Datasheet > NP2300SBMCT3G

NP2300SBMCT3G

更新时间： 2024-11-21 05:54:19

品牌	Logo	应用领域
安森美 - ONSEMI		光电二极管
页数	文件大小	规格书
7页	131K
描述
80A, Ultra Low Capacitance TSPD

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替代型号

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NP2300SBMCT3G 数据手册

NP-SBMC Series

80A, Ultra Low Capacitance

TSPD

The NP−SBMC series of Low Capacitance Thyristor Surge

Protection Devices (TSPD) protect sensitive electronic equipment

from transient overvoltage conditions. Due to their ultra low off−state

http://onsemi.com

capacitance (C ), they offer minimal signal distortion for high speed

equipment such as ADSL2+, VDSL and T1/E1 circuits. The low

nominal offstate capacitance translates into the extremely low

differential capacitance offering superb linearity with applied voltage

or frequency. These reliable silicon devices are also a suitable

alternative to GDT protectors.

The NP−SBMC Series helps designers to comply with the various

regulatory standards and recommendations including:

GR−1089−CORE,IEC 61000−4−5, ITU K.20/K.21/K.45, IEC 60950,

TIA−968−A,FCC Part 68, EN 60950, UL 1950.

ULTRA LOW CAPACITANCE

BIDIRECTIONAL SURFACE

MOUNT THYRISTOR

80A, 10x1000ms SURGE

Features

• Ultra Low − Micro Capacitance

• Low Leakage (Transparent)

• High Surge Current Capabilities

• Precise Turn on Voltages

• Low Voltage Overshoot

• These are Pb−Free Devices

SMB

JEDEC DO−214AA

CASE 403C

Typical Applications

• xDSL Central Office and Customer Premise

• T1/E1

• Other Broadband High Speed Data Transmission Equipment

MARKING DIAGRAM

ELECTRICAL CHARACTERISTICS

AYWW

xxxBMG

C , 2 V,

1 MHz

C , 50 V,

1 MHz

(BO)

DRM

pF (Max)

Device

xxx

= Assembly Location

= Year

= Work Week

= Specific Device Code

(NPxxx0SBMC)

= Pb−Free Package

NP0640SBMCT3G

NP0720SBMCT3G

NP0900SBMCT3G

NP1100SBMCT3G

NP1300SBMCT3G

NP1500SBMCT3G

NP1800SBMCT3G

NP2100SBMCT3G

NP2300SBMCT3G

NP2600SBMCT3G

NP3100SBMCT3G

NP3500SBMCT3G

$58

$65

$77

$88

$75

$98

$90

$130

$160

$180

$220

$240

$260

$300

$350

$400

$120

$140

$170

$180

$190

$220

$275

$320

(Note: Microdot may be in either location)

ORDERING INFORMATION

†

Device

Package

Shipping

NPxxx0SBMCT3G

SMB

(Pb−Free)

2500 /Tape &

Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

G in part number indicates RoHS compliance

Other protection voltages are available upon request

Symmetrical Protection − Values the same in both negative and positive

excursions

(See V−I Curve on page 3)

Publication Order Number:

September, 2008 − Rev. 1

NP3100SBMC/D

12 3 4 5 6 7

中文翻译

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NP2300SBMCT3G 替代型号

型号	品牌	替代类型	描述	数据表
P2300SBLRP	LITTELFUSE	功能相似	The series provides a surface mount solution that enables equipment to comply

与NP2300SBMCT3G相关器件

型号	品牌	获取价格	描述	数据表
NP2300SBT3G	ONSEMI	获取价格	Thyristor Surge Protectors High Voltage Bidirectional
NP2300SCMCT3G	ONSEMI	获取价格	100A, Ultra Low Capacitance TSPD
NP2300SCT3G	ONSEMI	获取价格	Thyristor Surge Protectors High Voltage Bidirectional
NP2300SET3G	ONSEMI	获取价格	SILICON SURGE PROTECTOR
NP236-102002	YAMAICHI	获取价格	IC Socket, PGA1020, 1020 Contact(s), 2.54mm Term Pitch, 0.05inch Row Spacing, Solder
NP236-102002-1	YAMAICHI	获取价格	Pin Grid Array /Zero Insertion Force (PGA/ZIF - Interstitial)
NP236-102002-2	YAMAICHI	获取价格	Pin Grid Array /Zero Insertion Force (PGA/ZIF - Interstitial)
NP23N06YDG	RENESAS	获取价格	MOS FIELD EFFECT TRANSISTOR
NP23N06YDG-E1-AY	RENESAS	获取价格	MOS FIELD EFFECT TRANSISTOR
NP23N06YDG-E2-AY	RENESAS	获取价格	MOS FIELD EFFECT TRANSISTOR

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