Datasheet > NP23N06YDG

NP23N06YDG

更新时间： 2024-09-25 07:16:59

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
8页	219K
描述
MOS FIELD EFFECT TRANSISTOR

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NP23N06YDG 数据手册

Preliminary Data Sheet

NP23N06YDG

MOS FIELD EFFECT TRANSISTOR

Description

R07DS0014EJ0100

Rev.1.00

Jul 01, 2010

The NP23N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

•

Low on-state resistance

⎯ R_DS(on)= 27 mΩ MAX. (V_GS= 10 V, I_D= 11.5 A)

Low Ciss: Ciss = 1200 pF TYP. (V_DS= 25 V, V_GS= 0 V)

Logic level drive type

Designed for automotive application and AEC-Q101 qualified

Small size package 8-pin HSON

•

Ordering Information

Part No.

NP23N06YDG -E1-AY ^∗

NP23N06YDG -E2-AY ^∗

LEAD PLATING

PACKING

Tape 2500 p/reel

Package

Pure Sn (Tin)

8-pin HSON, Taping (E1 type)

8-pin HSON, Taping (E2 type)

Note: ^∗1. Pb-free (This product does not contain Pb in the external electrode.)

Absolute Maximum Ratings (T_A= 25°C)

Item

Symbol

V_DSS

Ratings

Unit

Drain to Source Voltage (V_GS= 0 V)

Gate to Source Voltage (V_DS= 0 V)

Drain Current (DC) (T_C= 25°C)

V_GSS

I_D(DC)

I_D(pulse)

P_T1

Drain Current (pulse) ^∗

Total Power Dissipation (T_C= 25°C)

Total Power Dissipation (T_A= 25°C) ^∗

Channel Temperature

°C

P_T2

1.0

175

T_ch

Storage Temperature

Repetitive Avalanche Current ^∗

Repetitive Avalanche Energy ^∗

T_stg

−55 to +175

I_AR

E_AR

Thermal Resistance

Channel to Case Thermal Resistance

Channel to Ambient Thermal Resistance ^∗

R_th(ch-C)

R_th(ch-A)

2.5

°C/W

150

Notes: ^∗1. T_C= 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%

^∗2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt

*3. T_ch(peak)≤ 150°C, R_G= 25 Ω

R07DS0014EJ0100 Rev.1.00

Jul 01, 2010

Page 1 of 6

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