Datasheet > NP24N10CLB

NP24N10CLB

更新时间： 2024-09-24 23:54:23

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页数	文件大小	规格书
8页	73K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 24A I(D) \| TO-220AB

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NP24N10CLB 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

NP24N10CLB, NP24N10DLB, NP24N10ELB

SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

ORDERING INFORMATION

These products are N-channel MOS Field Effect

Transistor designed for high current switching

applications.

PART NUMBER

NP24N10CLB

NP24N10DLB

NP24N10ELB

PACKAGE

TO-220AB

TO-262

TO-263

FEATURES

• Channel temperature 175 degree rated

• Super low on-state resistance

R^DS(on)1= 80 mΩ MAX. (V^GS= 10 V, I^D= 12 A)

R^DS(on)2= 93 mΩ MAX. (V^GS= 5.0 V, I^D= 10 A)

• Low C^iss: C^iss= 1300 pF TYP.

(TO-220AB)

• Built-in gate protection diode

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^C= 25°C)

Drain Current (Pulse) ^Note1

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T

100

±20

±24

(TO-262)

±80

Total Power Dissipation (T^A= 25°C)

Total Power Dissipation (T^C= 25°C)

Single Avalanche Current ^Note2

Single Avalanche Energy ^Note2

Repetitive Avalanche Current ^Note3

Repetitive Avalanche Energy ^Note3

Channel Temperature

1.8

P^T

100

I^AS

24 / 7

57 / 245

E^AS

I^AR

E^AR

Tch

°C

(TO-263)

175

Storage Temperature

Tstg

–55 to +175

Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%

2. Starting T^ch= 25°C, V^DD= 50 V, R^G= 25 Ω , V^GS= 20 → 0 V

3. T^ch≤ 175°C, R^G= 25 Ω , V^GS= 20 → 0 V, Duty cycle ≤ 3%

THERMAL RESISTANCE

Channel to Case Thermal Resistance

R^th(ch-C)

R^th(ch-A)

1.50

83.3

°C/W

Channel to Ambient Thermal Resistance

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published December 2001 NS CP(K)

Printed in Japan

D13465EJ1V0DS00 (1st edition)

1998

12 3 4 5 6 7 8

中文翻译

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