Datasheet > NP15P06SLG_15

NP15P06SLG_15

更新时间： 2022-02-26 12:23:17

品牌	Logo	应用领域
瑞萨 - RENESAS		开关
页数	文件大小	规格书
9页	306K
描述
SWITCHING P-CHANNEL POWER MOS FET

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数据手册

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NP15P06SLG_15 数据手册

NP15P06SLG

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

10000

160

140

120

100

iss

^GS= −4.5 V

1000

100

oss

−10 V

rss

= −7.5 A

^GS= 0 V

Pulsed

f = 1 MHz

-75

-25

125

175

225

-0.1

-1

-10

-100

T^ch- Channel Temperature - °C

V^DS- Drain to Source Voltage - V

SWITCHING CHARACTERISTICS

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

-60

1000

100

-12

-10

-8

^DD= −30 V

^GS= −10 V

-50

= −48 V

d(off)

R = 0 Ω

−

30 V

-40

-30

-20

-10

12 V

-6

d(on)

-4

-2

I = −15 A

-0.1

-1

-10

-100

I^D- Drain Current - A

QG - Gate Charge - nC

SOURCE TO DRAIN DIODE

FORWARD VOLTAGE

REVERSE RECOVERY TIME vs.

DIODE FORWARD CURRENT

-100

1000

100

= 10 V

−

-10

-1

0 V

-0.1

-0.01

di/dt =

100 A/ s

− μ

Pulsed

^GS= 0 V

0.5

1.5

-0.1

-1

-10

-100

VF(S-D) - Source to Drain Voltage - V

IF - Diode Forward Current - A

Data Sheet D19078EJ2V0DS

1...4 5 678 9

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与NP15P06SLG_15相关器件

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