Datasheet > NP15P06SLG_15

NP15P06SLG_15

更新时间： 2022-02-26 12:23:17

品牌	Logo	应用领域
瑞萨 - RENESAS		开关
页数	文件大小	规格书
9页	306K
描述
SWITCHING P-CHANNEL POWER MOS FET

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数据手册

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NP15P06SLG_15 数据手册

NP15P06SLG

TYPICAL CHARACTERISTICS (TA = 25°C)

DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA

TOTAL POWER DISSIPATION vs.

CASE TEMPERATURE

120

100

25 50 75 100 125 150 175 200

T^C- Case Temperature - °C

FORWARD BIAS SAFE OPERATING AREA

-1000

-100

-10

D(pulse)

D(DC)

-1

-0.1

= 25°C

Single Pulse

-0.01

-0.1

-1

-10

-100

V^DS- Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000

100

R^th(ch-A)= 125°C/Wi

^th(ch-C)= 5.0°C/Wi

0.1

Single Pulse

100 1000

0.01

100 μ

1 m

10 m

100 m

PW - Pulse Width - s

Data Sheet D19078EJ2V0DS

1 2 3 456 7 8 9

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与NP15P06SLG_15相关器件

型号	品牌	描述	获取价格	数据表
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NP15P06SLG-E1-AY	RENESAS	Old Company Name in Catalogs and Other Documents	获取价格
NP15P06SLG-E1-AYNote	RENESAS	SWITCHING P-CHANNEL POWER MOS FET	获取价格
NP15P06SLG-E2-AY	NEC	Power Field-Effect Transistor, 15A I(D), 60V, 0.095ohm, 1-Element, P-Channel, Silicon, Met	获取价格
NP15P06SLG-E2-AY	RENESAS	Old Company Name in Catalogs and Other Documents	获取价格
NP15P06SLG-E2-AYNote	RENESAS	SWITCHING P-CHANNEL POWER MOS FET	获取价格