Datasheet > NP15P06SLG_15

NP15P06SLG_15

更新时间： 2022-02-26 12:23:17

品牌	Logo	应用领域
瑞萨 - RENESAS		开关
页数	文件大小	规格书
9页	306K
描述
SWITCHING P-CHANNEL POWER MOS FET

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数据手册

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NP15P06SLG_15 数据手册

NP15P06SLG

DRAIN CURRENT vs.

FORWARD TRANSFER CHARACTERISTICS

DRAIN TO SOURCE VOLTAGE

-50

-40

-30

-20

-10

-100

-10

^DS= −10 V

Pulsed

^GS= −10 V

-1

^ch= −55°C

−25°C

25°C

−4.5 V

-0.1

75°C

125°C

150°C

175°C

-0.01

-0.001

Pulsed

-4

-1

-2

-3

-5

-1

-2

-3

-4

-5

V^DS- Drain to Source Voltage - V

V^GS- Gate to Source Voltage - V

GATE TO SOURCE THRESHOLD VOLTAGE vs.

CHANNEL TEMPERATURE

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

-3

-2.5

-2

100

^ch= −55°C

−25°C

^DS= V^GS

= −250 μA

25°C

75°C

-1.5

-1

125°C

150°C

175°C

-0.5

^DS= −10 V

Pulsed

0.1

-75

-25

125

175

225

-0.1

-1

-10

-100

Tch - Channel Temperature - °C

ID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

160

Pulsed

140

120

100

140

120

= −15 A

−7.5 A

−3 A

100

−

4.5 V

−

10 V

Pulsed

-100

-0.1

-1

-10

-5

-10

-15

-20

I^D- Drain Current - A

V^GS- Gate to Source Voltage - V

Data Sheet D19078EJ2V0DS

1...3 4 567 8 9

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与NP15P06SLG_15相关器件

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