Datasheet > NP110N04PDG-E2-AZNote

NP110N04PDG-E2-AZNote

更新时间： 2022-02-26 12:02:34

品牌	Logo	应用领域
瑞萨 - RENESAS		开关
页数	文件大小	规格书
10页	251K
描述
SWITCHING N-CHANNEL POWER MOS FET

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NP110N04PDG

DRAIN CURRENT vs.

FORWARD TRANSFER CHARACTERISTICS

DRAIN TO SOURCE VOLTAGE

1000

100

500

400

300

200

100

^GS= 10 V

T = −55°C

25°C

75°C

150°C

175°C

4.5 V

0.1

^DS= 10 V

Pulsed

0.8

0.01

0.001

Pulsed

0.2

0.4

0.6

V^DS- Drain to Source Voltage - V

V^GS- Gate to Source Voltage - V

GATE TO SOURCE THRESHOLD VOLTAGE vs.

CHANNEL TEMPERATURE

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

2.5

100

T_A= 55°C

−

25°C

75°C

150°C

175°C

1.5

V_DS= 10 V

Puls ed

^DS= V^GS

= 10 mA

0.5

0.1

100

-100

-50

100

150

200

I^D- Drain Current - A

Tch - Channel Temperature - °C

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

Pulsed

= 110 A

55 A

Pulsed

22 A

^GS= 4.5 V

10 V

100

0.1

1000

ID - Drain Current - A

V^GS- Gate to Source Voltage - V

Data Sheet D17561EJ2V0DS

1...3 4 567 8 9 10

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