Datasheet > NP110N04PUK-E1-AY*1

NP110N04PUK-E1-AY*1

更新时间： 2022-02-26 11:12:26

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
8页	113K
描述
MOS FIELD EFFECT TRANSISTOR

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Preliminary Data Sheet

NP110N04PUK

MOS FIELD EFFECT TRANSISTOR

Description

R07DS0570EJ0100

Rev.1.00

Nov 17, 2011

The NP110N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features



Super low on-state resistance

_DS(on)= 1.4 m MAX. (V_GS= 10 V, I_D= 55 A)



Low C_iss: C_iss= 10500 pF TYP. (V_DS= 25 V)

Designed for automotive application and AEC-Q101 qualified

Ordering Information

Part No.

Lead Plating

Pure Sn (Tin)

Packing

Taping (E1 type)

Taping (E2 type)

Package

NP110N04PUK-E1-AY *¹

NP110N04PUK-E2-AY *¹

Tape 800 p/reel

TO-263 (MP-25ZP)

Note: *1 Pb-free (This product does not contain Pb in the external electrode)

Absolute Maximum Ratings (T_A= 25°C)

Item

Symbol

V_DSS

V_GSS

I_D(DC)

I_D(pulse)

P_T1

Ratings

Unit

Drain to Source Voltage (V_GS= 0 V)

Gate to Source Voltage (V_DS= 0 V)

Drain Current (DC) (T_C= 25°C)

Drain Current (pulse) *¹

20

110

440

348

Total Power Dissipation (T_C= 25°C)

Total Power Dissipation (T_A= 25°C)

Channel Temperature

°C

P_T2

1.8

T_ch

175

Storage Temperature

T_stg

–55 to 175

Repetitive Avalanche Current *²

Repetitive Avalanche Energy *²

I_AR

E_AR

518

Notes: *1 T_C= 25°C, P_W 10 s, Duty Cycle  1%

*2 R_G= 25 , V_GS= 20  0 V

Thermal Resistance

Channel to Case Thermal Resistance

Channel to Ambient Thermal Resistance

R_th(ch-C)

R_th(ch-A)

0.43

83.3

°C/W

R07DS0570EJ0100 Rev.1.00

Nov 17, 2011

Page 1 of 6

12 3 4 5 6 7 8

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