Datasheet > NP110N04PUK-E1-AY*1

NP110N04PUK-E1-AY*1

更新时间： 2022-02-26 11:12:26

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
8页	113K
描述
MOS FIELD EFFECT TRANSISTOR

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NP110N04PUK-E1-AY*1 数据手册

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NP110N04PUK

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

FORWARD TRANSFER CHARACTERISTICS

1000

500

400

300

200

100

T_A= –55°C

25°C

85°C

150°C

175°C

0.1

0.01

0.001

V_GS= 10 V

Pulsed

V_DS= 10 V

Pulsed

0.1

0.2

0.3

0.4

0.5

0.6

V_DS- Drain to Source Voltage - V

V_GS- Gate to Source Voltage - V

GATE TO SOURCE THRESHOLD VOLTAGE vs.

CHANNEL TEMPERATURE

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

1000

100

T_A= –55°C

25°C

85°C

150°C

175°C

V_DS= V_GS

I_D= 250 μA

V_DS= 5 V

Pulsed

–100 –50

100

150

200

100

1000

T_ch- Channel Temperature - °C

I_D- Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

V_GS= 10 V

I_D= 55 A

Pulsed

100

I_D- Drain Current - A

Pulsed

_GS- Gate to Source Voltage - V

0.1

1000

R07DS0570EJ0100 Rev.1.00

Nov 17, 2011

Page 4 of 6

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