Datasheet > NNCD4.3B-AZ

NNCD4.3B-AZ

更新时间： 2024-11-12 19:27:39

品牌	Logo	应用领域
瑞萨 - RENESAS		局域网二极管
页数	文件大小	规格书
8页	43K
描述
Trans Voltage Suppressor Diode, 100W, Unidirectional, 1 Element, Silicon, DO-35

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NNCD4.3B-AZ 数据手册

DATA SHEET

E.S.D NOISE CLIPPING DIODES

NNCD3.3B to NNCD12B

ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES

(500 mW TYPE)

This product series is a diode developed for E.S.D (Electrostatic

PACKAGE DIMENSIONS

Discharge) noise protection. Based on the IEC1000-4-2 test on

electromagnetic interference (EMI), the diode assures an endur-

ance of no less than 30 kV.

(in millimeters)

0.5

Type NNCD2.0B to NNCD12B Series is into DO-35 Package with

DHD (Double Heatsink Diode) construction having allowable

power dissipation of 500 mW.

Cathode

indication

FEATURES

•

Based on the electrostatic discharge immunity test (IEC1000-4-

2), the product assures the minimum endurance of 30 kV.

Based on the reference supply of the set, the product achieves

a series over a wide range (15 product name lined up).

DHD (Double Heatsink Diode) construction.

2.0 MAX.

APPLICATIONS

•

Circuit E.S.D protection.

Circuits for Waveform clipper, Surge absorber.

MAXIMUM RATINGS (TA = 25 °C)

Power Dissipation

500 mW

Surge Reverse Power

Junction Temperature

Storage Temperature

P^RSM

T^j

100 W (tT = 10 µs 1 pulse) Fig. 7

175 °C

Tstg

–65 °C to +175 °C

Document No. D11770EJ2V0DS00 (2nd edition)

Date Published December 1996 N

Printed in Japan

1996

12 3 4 5 6 7 8

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