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NNCD4.3D PDF预览

NNCD4.3D

更新时间: 2024-11-11 22:29:07
品牌 Logo 应用领域
日电电子 - NEC 瞬态抑制器二极管光电二极管局域网
页数 文件大小 规格书
8页 43K
描述
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 200 mW TYPE

NNCD4.3D 技术参数

生命周期:Obsolete包装说明:SUPER MINIMOLD PACKAGE-2
Reach Compliance Code:unknown风险等级:5.77
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PDSO-G2元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性:UNIDIRECTIONAL最大功率耗散:0.2 W
认证状态:Not Qualified表面贴装:YES
技术:AVALANCHE端子形式:GULL WING
端子位置:DUALBase Number Matches:1

NNCD4.3D 数据手册

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DATA SHEET  
E.S.D NOISE CLIPPING DIODES  
NNCD3.3D to NNCD12D  
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES  
(200 mW TYPE)  
This product series is a diode developed for E.S.D (Electrostatic  
Discharge) noise protection. Based on the IEC1000-4-2 test on  
electromagnetic interference (EMI), the diode assures an endur-  
ance of no less than 30 kV, thus making itself most suitable for  
external interface circuit protection.  
PACKAGE DIMENSIONS  
(in millimeters)  
2.5 ± 0.15  
1.7 ± 0.1  
Type NNCD3.3D to NNCD12D Series are into 2PIN Super Mini  
Mold Package having allowable power dissipation of 200 mW.  
FEATURES  
Based on the electrostatic discharge immunity test (IEC1000-4-  
2), the product assures the minimum endurance of 30 kV.  
Based on the reference supply of the set, the product achieves  
a series over a wide range (15 product name lined up).  
Cathode  
Indication  
APPLICATIONS  
External interface circuit E.S.D protection.  
Circuits for Waveform clipper, Surge absorber.  
MAXIMUM RATINGS (TA = 25 °C)  
Power Dissipation  
P
200 mW  
Surge Reverse Power  
Junction Temperature  
Storage Temperature  
PRSM  
Tj  
85 W (tT = 10 µs 1 pulse) Fig. 6  
150 °C  
Tstg  
–55 °C to +150 °C  
Document No. D11772EJ2V0DS00 (2nd edition)  
Date Published December 1996 N  
Printed in Japan  
1996  
©

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