是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | DFN |
包装说明: | VSON, SOLCC6,.04,16 | 针数: | 6 |
Reach Compliance Code: | compliant | HTS代码: | 8542.39.00.01 |
Factory Lead Time: | 1 week | 风险等级: | 5.73 |
系列: | 1G | JESD-30 代码: | R-PDSO-N6 |
JESD-609代码: | e4 | 长度: | 1.2 mm |
负载电容(CL): | 50 pF | 逻辑集成电路类型: | OR GATE |
最大I(ol): | 0.002 A | 湿度敏感等级: | 1 |
功能数量: | 1 | 输入次数: | 2 |
端子数量: | 6 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | VSON | 封装等效代码: | SOLCC6,.04,16 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, VERY THIN PROFILE |
包装方法: | TAPE AND REEL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 1.8/5 V | Prop。Delay @ Nom-Sup: | 26.7 ns |
传播延迟(tpd): | 26.7 ns | 认证状态: | Not Qualified |
施密特触发器: | NO | 座面最大高度: | 0.55 mm |
子类别: | Gates | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 1.65 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | MILITARY | 端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) |
端子形式: | NO LEAD | 端子节距: | 0.4 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 1 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NLU1GT50 | ONSEMI |
获取价格 |
Single Buffer, Non-Inverting, TTL Level | |
NLU1GT50_12 | ONSEMI |
获取价格 |
Single Buffer, Non-Inverting, TTL Level | |
NLU1GT50_16 | ONSEMI |
获取价格 |
Single Buffer, Non-Inverting, TTL Level | |
NLU1GT50AMUTCG | ONSEMI |
获取价格 |
Single Buffer, Non-Inverting, TTL Level | |
NLU1GT50AMX1TCG | ONSEMI |
获取价格 |
Single Buffer, Non-Inverting, TTL Level | |
NLU1GT50BMX1TCG | ONSEMI |
获取价格 |
Single Buffer, Non-Inverting, TTL Level | |
NLU1GT50CMUTCG | ONSEMI |
获取价格 |
Single Buffer, Non-Inverting, TTL Level | |
NLU1GT50CMX1TCG | ONSEMI |
获取价格 |
Single Buffer, Non-Inverting, TTL Level | |
NLU1GT50MUTCG | ONSEMI |
获取价格 |
Single Buffer, Non-Inverting, TTL Level | |
NLU1GT86 | ONSEMI |
获取价格 |
Single 2-Input Exclusive OR Gate, TTL Level LSTTL-Compatible Inputs |