是否无铅: | 不含铅 | 生命周期: | End Of Life |
零件包装代码: | DFN | 包装说明: | 1.45 X 1 MM, 0.50 MM PITCH, LEAD FREE, UDFN-6 |
针数: | 6 | Reach Compliance Code: | compliant |
HTS代码: | 8542.39.00.01 | Factory Lead Time: | 1 week |
风险等级: | 5.62 | 系列: | 1G |
JESD-30 代码: | R-PDSO-N6 | JESD-609代码: | e4 |
长度: | 1.45 mm | 负载电容(CL): | 50 pF |
逻辑集成电路类型: | AND GATE | 最大I(ol): | 0.004 A |
湿度敏感等级: | 1 | 功能数量: | 1 |
输入次数: | 2 | 端子数量: | 6 |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | VSON |
封装等效代码: | SOLCC6,.04,20 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, VERY THIN PROFILE | 包装方法: | TAPE AND REEL |
电源: | 1.8/5 V | Prop。Delay @ Nom-Sup: | 16.5 ns |
传播延迟(tpd): | 16.5 ns | 认证状态: | Not Qualified |
施密特触发器: | NO | 座面最大高度: | 0.55 mm |
子类别: | Gates | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 1.65 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | MILITARY | 端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) |
端子形式: | NO LEAD | 端子节距: | 0.5 mm |
端子位置: | DUAL | 宽度: | 1 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NLU1G08AMX1TCG | ONSEMI |
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Single 2-Input AND Gate | |
NLU1G08BMX1TCG | ONSEMI |
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Single 2-Input AND Gate | |
NLU1G08CMUTCG | ONSEMI |
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Single 2-Input AND Gate | |
NLU1G08CMX1TCG | ONSEMI |
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Single 2-Input AND Gate | |
NLU1G08MUTCG | ONSEMI |
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Single 2-Input AND Gate | |
NLU1G14 | ONSEMI |
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Single Schmitt-Trigger Inverter | |
NLU1G14_12 | ONSEMI |
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Single Schmitt-Trigger Inverter | |
NLU1G14_16 | ONSEMI |
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Single Schmitt-Trigger Inverter | |
NLU1G14AMUTCG | ONSEMI |
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Single Schmitt-Trigger Inverter | |
NLU1G14AMX1TCG | ONSEMI |
获取价格 |
Single Schmitt-Trigger Inverter |