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NLAS5223LMNR2G PDF预览

NLAS5223LMNR2G

更新时间: 2024-11-20 03:46:23
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管
页数 文件大小 规格书
11页 116K
描述
Ultra-Low 0.5 ohm Dual SPDT Analog Switch

NLAS5223LMNR2G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:QFN包装说明:VQCCN, LCC10,.06X.07,16
针数:10Reach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:5.59
模拟集成电路 - 其他类型:SPDTJESD-30 代码:R-XQCC-N10
JESD-609代码:e4长度:1.8 mm
信道数量:1功能数量:2
端子数量:10标称断态隔离度:65 dB
通态电阻匹配规范:0.05 Ω最大通态电阻 (Ron):0.3 Ω
最高工作温度:85 °C最低工作温度:-40 °C
输出:SEPARATE OUTPUT封装主体材料:UNSPECIFIED
封装代码:VQCCN封装等效代码:LCC10,.06X.07,16
封装形状:RECTANGULAR封装形式:CHIP CARRIER, VERY THIN PROFILE
峰值回流温度(摄氏度):260电源:1.8/3.3 V
认证状态:Not Qualified座面最大高度:0.8 mm
子类别:Multiplexer or Switches最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):3 V
表面贴装:YES最长断开时间:30 ns
最长接通时间:50 ns切换:BREAK-BEFORE-MAKE
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:NO LEAD
端子节距:0.4 mm端子位置:QUAD
处于峰值回流温度下的最长时间:40宽度:1.4 mm
Base Number Matches:1

NLAS5223LMNR2G 数据手册

 浏览型号NLAS5223LMNR2G的Datasheet PDF文件第2页浏览型号NLAS5223LMNR2G的Datasheet PDF文件第3页浏览型号NLAS5223LMNR2G的Datasheet PDF文件第4页浏览型号NLAS5223LMNR2G的Datasheet PDF文件第5页浏览型号NLAS5223LMNR2G的Datasheet PDF文件第6页浏览型号NLAS5223LMNR2G的Datasheet PDF文件第7页 
NLAS5223, NLAS5223L  
Ultra−Low 0.5 W  
Dual SPDT Analog Switch  
The NLAS5223 is an advanced CMOS analog switch fabricated in  
Sub−micron silicon gate CMOS technology. The device is a dual  
Independent Single Pole Double Throw (SPDT) switch featuring  
Ultra−Low R of 0.5 , at V = 3.0 $ 0.3 V.  
The part also features guaranteed Break Before Make (BBM)  
switching, assuring the switches never short the driver.  
ON  
CC  
http://onsemi.com  
MARKING  
DIAGRAM  
Features  
Ultra−Low R , t0.5 at V = 3.0 $ 0.3 V  
ON  
CC  
XXMG  
WQFN−10  
CASE 488AQ  
NLAS5223 Interfaces with 2.8 V Chipset  
NLAS5223L Interfaces with 1.8 V Chipset  
Single Supply Operation from 1.65−3.6 V  
Smallest 1.4 x 1.8 x 0.75 mm Thin QFN Package  
G
1
XX  
= Specific Device Code  
AU = NLAS5223  
AV = NLAS5223L  
= Date Code  
Full 0−V Signal Handling Capability  
CC  
M
High Off−Channel Isolation  
Low Standby Current, t50 nA  
Low Distortion  
G
= Pb−Free Device  
(Note: Microdot may be in either location)  
R Flatness of 0.15  
ON  
GND  
6
NC2  
7
High Continuous Current Capability  
$300 mA Through Each Switch  
Large Current Clamping Diodes at Analog Inputs  
$300 mA Continuous Current Capability  
IN2  
8
5
NC1  
ESD  
Human Body Model > 2000 V  
COM2  
NO2  
9
4
3
IN1  
These are Pb−Free Devices  
10  
COM1  
Applications  
Cell Phone Audio Block  
Speaker and Earphone Switching  
Ring−Tone Chip / Amplifier Switching  
Modems  
1
2
V
CC  
NO1  
FUNCTION TABLE  
NO 1, 2  
IN 1, 2  
NC 1, 2  
0
1
OFF  
ON  
ON  
OFF  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 10 of this data sheet.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
September, 2006 − Rev. 4  
NLAS5223/D  

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