RoHS
NKET135 Series RoHS
Nell High Power Products
TRIGGERING
PARAMETER
SYMBOL
PGM
PG(AV)
IGM
TEST CONDITIONS
tp 5 ms, TJ = TJ maximum
f = 50 Hz, TJ = TJ maximum
VALUES
UNITS
≤
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
10
3
W
3
A
≤
tp 5 ms, TJ = TJ maximum
Maximum peak negative
gate voltage
- VGT
10
V
Maximum required DC
gate voltage to trigger
VGT
0.7~1.8
Anode supply = 6 V,
TJ = 25 °C
Ω
resistive load; Ra = 1
Maximum required DC
gate current to trigger
IGT
mA
30~150
Maximum gate voltage
that will not trigger
VGD
V
0.25
applied
TJ = TJ maximum, 66.7% V
DRM
Maximum gate current
that will not trigger
IGD
10
mA
Maximum rate of rise of
turned-on current
= 25ºC ,IGM = 1.5A ,tr ≤ 0.5 µs
TJ
dI/dt
150
A/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction operating
temperature range
TJ
- 40 to 125
°C
Maximum storage
temperature range
TStg
RthJC
RthCS
- 40 to 150
Maximum thermal resistance,
junction to case per junction
DC operation
0.20
°C/W
Maximum thermal resistance,
case to heatsink per module
0.055
Mounting surface, smooth , flat and greased
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
Lubricated threads.
IAP to heatsink , M6
busbar to IAP , M6
Mounting
torque ± 10 %
4 to 6
N.m
g
Approximate weight
220
oz.
7.05
New INT-A-PAK
Case style
Ordering Information Tabel
Device code
NKET 135
/
16
A
1
3
3
2
-
Module type, NKET for single thyristor module
1
2
3
-
-
Current rating : I
T(AV)
Voltage code x 100 = V
RRM
-
Assembly type, ˝A˝ for soldering type
4
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