Datasheet > NJ32

NJ32

更新时间： 2024-09-18 03:46:31

品牌	Logo	应用领域
INTERFET		晶体放大器晶体管场效应晶体管
页数	文件大小	规格书
3页	134K
描述
Silicon Junction Field-Effect Transistor General Purpose Amplifier

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中文翻译

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数据手册

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NJ32 数据手册

F-18

01/99

NJ32 Process

Silicon Junction Field-Effect Transistor

¥ General Purpose Amplifier

Absolute maximum ratings at TA = 25¡C

Gate Current, Ig

10 mA

+150°C

– 65°C to +175°C

Operating Junction Temperature, Tj

Storage Temperature, Ts

S-D

Devices in this Databook based on the NJ32 Process.

S-D

Datasheet

2N3821, 2N3822

2N3823, 2N3824

2N4222, 2N4222A

Die Size = 0.018" X 0.018"

All Bond Pads = 0.004" Sq.

Substrate is also Gate.

At 25°C free air temperature:

NJ32 Process

Static Electrical Characteristics

Min

Typ

Max

Unit

Test Conditions

Gate Source Breakdown Voltage

Reverse Gate Leakage Current

Drain Saturation Current (Pulsed)

Gate Source Cutoff Voltage

– 25

– 50

– 10

I = – 1 µA, V = ØV

(BR)GSS

– 100

= – 15V, V = ØV

GSS

= 15V, V = ØV

DSS

– 0.5

– 6

= 15V, I = 1 nA

GS(OFF)

Dynamic Electrical Characteristics

Forward Transconductance

Input Capacitance

= 15V, V = ØV

f = 1 kHz

f = 1 MHz

f = 1 kHz

7.0

= 15V, V = ØV

iss

Feedback Capacitance

Equivalent Noise Voltage

1.3

= 15V, V = ØV

rss

e¯

nV/√HZ V = 10V, I = 5 mA

DS D

1000 N. Shiloh Road, Garland, TX 75042

(972) 487-1287 FAX (972) 276-3375

www.interfet.com

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