生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-CDFM-F2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 外壳连接: | SOURCE |
配置: | SINGLE | 最小漏源击穿电压: | 15 V |
最大漏极电流 (ID): | 14 A | FET 技术: | METAL SEMICONDUCTOR |
最高频带: | C BAND | JESD-30 代码: | R-CDFM-F2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | DEPLETION MODE | 最高工作温度: | 175 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 100 W | 最小功率增益 (Gp): | 6 dB |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | GALLIUM ARSENIDE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NEZ7785-4D | NEC |
获取价格 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
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NEZ7785-4D | CEL |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Se |
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NEZ7785-4DD | NEC |
获取价格 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
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NEZ7785-4DD | CEL |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Se |
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NEZ7785-4DL | CEL |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Se |
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NEZ7785-8D | NEC |
获取价格 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
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NEZ7785-8D | CEL |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Se |
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NEZ7785-8DD | NEC |
获取价格 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
![]() |
NEZ7785-8DL | NEC |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Se |
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NEZ7785-8DL | CEL |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Se |
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