生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-CDFM-F2 |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
外壳连接: | SOURCE | 配置: | SINGLE |
最小漏源击穿电压: | 10 V | 最大漏极电流 (ID): | 1.5 A |
FET 技术: | METAL SEMICONDUCTOR | 最高频带: | C BAND |
JESD-30 代码: | R-CDFM-F2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | DEPLETION MODE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | GALLIUM ARSENIDE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NEZ7785-8D | NEC |
获取价格 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
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NEZ7785-8D | CEL |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Se |
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NEZ7785-8DD | NEC |
获取价格 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
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NEZ7785-8DL | NEC |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Se |
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NEZ7785-8DL | CEL |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Se |
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NEZ-8B | NEC |
获取价格 |
C-BAND POWER GAAS MESFET |
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NEZ-8BD | NEC |
获取价格 |
C-BAND POWER GAAS MESFET |
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NEZB104Z55V135X75F | NIC |
获取价格 |
Memory Back-Up Capacitors |
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NEZB105Z55V215X8F | NIC |
获取价格 |
Memory Back-Up Capacitors |
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NEZB155Z55V215X8F | NIC |
获取价格 |
Memory Back-Up Capacitors |
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