生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-CDFM-F2 |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
外壳连接: | SOURCE | 配置: | SINGLE |
最小漏源击穿电压: | 10 V | 最大漏极电流 (ID): | 1.5 A |
FET 技术: | METAL SEMICONDUCTOR | 最高频带: | C BAND |
JESD-30 代码: | R-CDFM-F2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | DEPLETION MODE |
最高工作温度: | 175 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 25 W |
最小功率增益 (Gp): | 7 dB | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | GALLIUM ARSENIDE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NEZ7785-4DD | NEC |
获取价格 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
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NEZ7785-4DD | CEL |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Se |
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NEZ7785-4DL | CEL |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Se |
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NEZ7785-8D | NEC |
获取价格 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
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NEZ7785-8D | CEL |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Se |
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NEZ7785-8DD | NEC |
获取价格 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
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NEZ7785-8DL | NEC |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Se |
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NEZ7785-8DL | CEL |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Se |
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NEZ-8B | NEC |
获取价格 |
C-BAND POWER GAAS MESFET |
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NEZ-8BD | NEC |
获取价格 |
C-BAND POWER GAAS MESFET |
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