LM567, LM567C
SNOSBQ4D –MAY 1999–REVISED MARCH 2013
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS(1)(2)(3)
Supply Voltage Pin
9V
1100 mW
15V
(4)
Power Dissipation
V8
V3
−10V
V3
V4 + 0.5V
−65°C to +150°C
Storage Temperature Range
Operating Temperature Range
LM567H
−55°C to +125°C
LM567CH, LM567CM, LM567CN
0°C to +70°C
Soldering Information
PDIP Package
Soldering (10 sec.)
260°C
SOIC Package
Vapor Phase (60 sec.)
215°C
220°C
Infrared (15 sec.)
See http://www.ti.com for other methods of soldering surface mount devices.
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical
specifications under particular test conditions which ensure specific performance limits. This assumes that the device is within the
Operating Ratings. Specifications are not ensured for parameters where no limit is given, however, the typical value is a good indication
of device performance.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(3) Refer to RETS567X drawing for specifications of military LM567H version.
(4) The maximum junction temperature of the LM567 and LM567C is 150°C. For operating at elevated temperatures, devices in the TO-5
package must be derated based on a thermal resistance of 150°C/W, junction to ambient or 45°C/W, junction to case. For the DIP the
device must be derated based on a thermal resistance of 110°C/W, junction to ambient. For the SOIC package, the device must be
derated based on a thermal resistance of 160°C/W, junction to ambient.
ELECTRICAL CHARACTERISTICS
AC Test Circuit, TA = 25°C, V+ = 5V
LM567
Typ
5.0
6
LM567C/LM567CM
Parameters
Conditions
Units
Min
Max
9.0
8
Min
Typ
5.0
7
Max
Power Supply Voltage Range
Power Supply Current Quiescent
Power Supply Current Activated
Input Resistance
4.75
4.75
9.0
10
15
V
mA
RL = 20k
RL = 20k
11
13
12
20
20
15
mA
18
10
20
15
10
kΩ
Smallest Detectable Input Voltage
Largest No Output Input Voltage
IL = 100 mA, fi = fo
IC = 100 mA, fi = fo
20
25
25
mVrms
mVrms
15
Largest Simultaneous Outband Signal to
Inband Signal Ratio
6
6
dB
dB
Minimum Input Signal to Wideband Noise
Ratio
Bn = 140 kHz
−6
−6
Largest Detection Bandwidth
12
14
1
16
2
10
14
2
18
3
% of fo
% of fo
Largest Detection Bandwidth Skew
Largest Detection Bandwidth Variation with
Temperature
±0.1
±0.1
%/°C
Largest Detection Bandwidth Variation with 4.75–6.75V
Supply Voltage
±1
±2
±1
±5
%V
Highest Center Frequency
100
500
100
500
kHz
2
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