NE5550234

更新时间： 2024-01-23 14:53:56

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
16页	1174K
描述
Silicon Power MOS FET

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技术参数
数据手册

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NE5550234 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.83
Is Samacsys：	N	配置：	Single
最大漏极电流 (Abs) (ID)：	0.6 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	12.5 W	子类别：	FET General Purpose Powers
表面贴装：	YES	Base Number Matches：	1

NE5550234 数据手册

NE5550234

RECOMMENDED SOLDERING CONDITIONS

This product should be soldered and mounted under the following recommended conditions. For soldering methods and

conditions other than those recommended below, contact your nearby sales office.

Soldering Method

Soldering Conditions

Condition Symbol

Infrared Reflow

Peak temperature (package surface temperature) : 260C or below

IR260

Time at peak temperature

: 10 seconds or less

: 60 seconds or less

: 12030 seconds

: 3 times

Time at temperature of 220C or higher

Preheating time at 120 to 180C

Maximum number of reflow processes

Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below

Wave Soldering

Partial Heating

Peak temperature (molten solder temperature)

Time at peak temperature

: 260C or below

: 10 seconds or less

WS260

HS350

Preheating temperature (package surface temperature)

: 120C or below

: 1 time

Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below

Maximum number of flow processes

Peak temperature (terminal temperature)

Soldering time (per side of device)

: 350C or below

: 3 seconds or less

Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below

CAUTION

Do not use different soldering methods together (except for partial heating).

R09DS0039EJ0100 Rev.1.00

Apr 25, 2012

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