Datasheet > NE5550979A-AZ

NE5550979A-AZ

更新时间： 2024-02-12 16:43:54

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
10页	431K
描述
RF POWER, FET

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技术参数
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NE5550979A-AZ 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

NE5550979A-AZ 数据手册

Data Sheet

NE5550979A

Silicon Power LDMOS FET

FEATURES

R09DS0031EJ0100

Rev.1.00

Nov 25, 2011

•

High Output Power

: P_out= 39.5 dBm TYP. (V_DS= 7.5 V, I_Dset= 200 mA, f = 460 MHz, P_in= 25 dBm)

High power added efficiency : η_add= 66% TYP. (V_DS= 7.5 V, I_Dset= 200 mA, f = 460 MHz, P_in= 25 dBm)

High Linear gain

High ESD tolerance

Suitable for VHF to UHF-BAND Class-AB power amplifier.

: G_L= 22 dB TYP. (V_DS= 7.5 V, I_Dset= 200 mA, f = 460 MHz, P_in= 10 dBm)

: ESD tolerance > 8 kV (IEC61000-4-2, Contact discharge)

APPLICATIONS

•

150 MHz Band Radio System

460 MHz Band Radio System

900 MHz Band Radio System

ORDERING INFORMATION

Part Number

Order Number

Package Marking

Supplying Form

NE5550979A

NE5550979A-AZ

79A

• 12 mm wide embossed taping

• Gate pin faces the perforation side of the tape

(Pb Free)

NE5550979A-T1

NE5550979A-T1-AZ

• 12 mm wide embossed taping

• Gate pin faces the perforation side of the tape

• Qty 1 kpcs/reel

NE5550979A-T1A NE5550979A-T1A-AZ

• 12 mm wide embossed taping

• Gate pin faces the perforation side of the tape

• Qty 5 kpcs/reel

Remark To order evaluation samples, please contact your nearby sales office.

Part number for sample order: NE5550979A

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C, unless otherwise specified)

Operation in excess of any one of these parameters may result in permanent damage.

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Symbol

V_DS

Ratings

Unit

6.0

V_GS

I_DS

3.0

Total Power Dissipation ^Note

Channel Temperature

Storage Temperature

Note: Value at T_C= 25°C

P_tot

°C

T_ch

150

T_stg

−55 to +150

CAUTION

Observe precautions when handling because these devices are sensitive to electrostatic discharge.

R09DS0031EJ0100 Rev.1.00

Nov 25, 2011

Page 1 of 8

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