Datasheet > NE5550279A-T1A

NE5550279A-T1A

更新时间： 2025-09-01 02:54:23

品牌	Logo	应用领域
CEL		/
页数	文件大小	规格书
8页	772K
描述
Silicon Power LDMOS FET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NE5550279A-T1A 数据手册

A Business Partner of Renesas Electronics Corporation.

Data Sheet

R09DS0033EJ0200

Rev.2.00

NE5550279A

Silicon Power LDMOS FET

FEATURES

Jul 04, 2012

•

High Output Power

: P_out= 33.0 dBm TYP. (V_DS= 7.5 V, I_Dset= 40 mA, f = 460 MHz, P_in= 15 dBm)

High power added efficiency : η_add= 68% TYP. (V_DS= 7.5 V, I_Dset= 40 mA, f = 460 MHz, P_in= 15 dBm)

High Linear gain

High ESD tolerance

Suitable for VHF to UHF-BAND Class-AB power amplifier.

: G_L= 22.5 dB TYP. (V_DS= 7.5 V, I_Dset= 40 mA, f = 460 MHz, P_in= 0 dBm)

APPLICATIONS

•

150 MHz Band Radio System

460 MHz Band Radio System

900 MHz Band Radio System

ORDERING INFORMATION

Part Number

Order Number

Package Marking

Supplying Form

NE5550279A

NE5550279A-A

79A

• 12 mm wide embossed taping

(Pb Free)

• Gate pin faces the perforation side of the tape

NE5550279A-T1

NE5550279A-T1-A

• 12 mm wide embossed taping

• Gate pin faces the perforation side of the tape

• Qty 1 kpcs/reel

NE5550279A-T1A NE5550279A-T1A-A

• 12 mm wide embossed taping

• Gate pin faces the perforation side of the tape

• Qty 5 kpcs/reel

Remark To order evaluation samples, please contact your nearby sales office.

Part number for sample order: NE5550279A-A

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C, unless otherwise specified)

Operation in excess of any one of these parameters may result in permanent damage.

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Symbol

V_DS

Ratings

Unit

V_GS

6.0

I_DS

0.6

Drain Current

I_DS-pulse

1.2

(50% Duty Pulsed)

Total Power Dissipation ^Note

Channel Temperature

P_tot

T_ch

T_stg

6.25

150

°C

Storage Temperature

−55 to +150

Note: Value at T_C= 25°C

CAUTION

Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

R09DS0033EJ0200 Rev.2.00

Jul 04, 2012

Page 1 of 7

12 3 4 5 6 7 8

中文翻译

下载PDF

与NE5550279A-T1A相关器件

型号	品牌	获取价格	描述	数据表
NE5550279A-T1A-A	CEL	获取价格	Silicon Power LDMOS FET
NE5550779A	RENESAS	获取价格	Silicon Power LDMOS FET
NE5550779A-A	RENESAS	获取价格	Silicon Power LDMOS FET
NE5550779A-T1	RENESAS	获取价格	Silicon Power LDMOS FET
NE5550779A-T1-A	RENESAS	获取价格	Silicon Power LDMOS FET
NE5550779A-T1A	RENESAS	获取价格	Silicon Power LDMOS FET
NE5550779A-T1A-A	RENESAS	获取价格	Silicon Power LDMOS FET
NE5550979A	RENESAS	获取价格	Silicon Power LDMOS FET
NE5550979A-A	RENESAS	获取价格	Silicon Power LDMOS FET
NE5550979A-AZ	RENESAS	获取价格	RF POWER, FET