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NE55410GR-T3-AZ

更新时间： 2024-11-12 05:54:03
品牌 Logo 应用领域
日电电子 - NEC 晶体放大器射频场效应晶体管功率放大器光电二极管ISM频段
页数 文件大小 规格书
13页 179K
描述
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER

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中文翻译

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NE55410GR-T3-AZ 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：LEAD FREE, PLASTIC, HTSSOP, 16 PINReach Compliance Code：compliant
风险等级：5.76Is Samacsys：N
配置：SEPARATE, 2 ELEMENTS最小漏源击穿电压：65 V
最大漏极电流 (ID)：1 AFET 技术：METAL-OXIDE SEMICONDUCTOR
最高频带：S BANDJESD-30 代码：R-PDSO-F16
JESD-609代码：e6湿度敏感等级：1
元件数量：2端子数量：16
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子面层：TIN BISMUTH端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：10
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
Base Number Matches：1

NE55410GR-T3-AZ 数据手册

 浏览型号NE55410GR-T3-AZ的Datasheet PDF文件第2页浏览型号NE55410GR-T3-AZ的Datasheet PDF文件第3页浏览型号NE55410GR-T3-AZ的Datasheet PDF文件第4页浏览型号NE55410GR-T3-AZ的Datasheet PDF文件第5页浏览型号NE55410GR-T3-AZ的Datasheet PDF文件第6页浏览型号NE55410GR-T3-AZ的Datasheet PDF文件第7页 
DATA SHEET  
LDMOS FIELD EFFECT TRANSISTOR  
NE55410GR  
N-CHANNEL SILICON POWER LDMOS FET  
FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER  
DESCRIPTION  
The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such  
as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different  
FET's on one die manufactured using our NEWMOS technology (our WSi gate lateral MOS FET), and its nitride  
surface passivation and quadruple layer aluminum silicon metalization offer a high degree of reliability.  
FEATURES  
•
•
Two different FET’s (Q1 : Pout = 2 W, Q2 : Pout = 10 W) in one package  
Over 25 dB gain available by connecting two FET’s in series  
: GL (Q1) = 13.5 dB TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz)  
: GL (Q2) = 11.0 dB TYP. (VDS = 28 V, IDset (Q2) = 100 mA, f = 2 140 MHz)  
High 1 dB compression output power : PO (1 dB) (Q1) = 35.4 dBm TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz)  
: PO (1 dB) (Q2) = 40.4 dBm TYP. (VDS = 28 V, IDset (Q2) = 100 mA, f = 2 140 MHz)  
•
•
•
High drain efficiency  
: ηd (Q1) = 52% TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz)  
: ηd (Q2) = 46% TYP. (VDS = 28 V, IDset (Q2) = 100 mA, f = 2 140 MHz)  
: IM3 (Q1) = −40 dBc TYP. (VDS = 28 V, IDset (Q1+Q2) = 120 mA,  
f = 2 132.5/2 147.5 MHz, Pout = 33 dBm (2 tones) )  
Low intermodulation distortion  
•
•
•
•
•
Single Supply (VDS : 3 V < VDS ≤ 32 V)  
<R>  
Excellent Thermal Stability  
Surface mount type and Super low cost plastic package : 16-pin plastic HTSSOP  
Integrated ESD protection  
Excellent stability against HCI (Hot Carrier Injection)  
APPLICATION  
<R>  
•
•
Digital cellular base station PA : W-CDMA/GSM/D-AMPS/N-CDMA/PCS etc.  
UHF-band TV transmitter PA  
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. PU10542EJ03V0DS (3rd edition)  
Date Published January 2007 NS CP(N)  
Printed in Japan  
2004, 2007  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  
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