Data Sheet
NE5550234
Silicon Power MOS FET
FEATURES
R09DS0039EJ0100
Rev.1.00
Apr 25, 2012
High Output Power
: Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)
High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)
High Linear gain
High ESD tolerance
Suitable for VHF to UHF-BAND Class-AB power amplifier.
: GL = 23.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 0 dBm)
APPLICATIONS
150 MHz Band Radio System
460 MHz Band Radio System
900 MHz Band Radio System
ORDERING INFORMATION
Part Number
Order Number
Package Marking
Supplying Form
NE5550234
NE5550234-AZ
3-pin
power
V5
12 mm wide embossed taping
Gate pin faces the perforation side of the tape
minimold
(34 PKG)
(Pb-Free)
NE5550234-T1
NE5550234-T1-AZ
12 mm wide embossed taping
Gate pin faces the perforation side of the tape
Qty 1 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE5550234
ABSOLUTE MAXIMUM RATINGS (TA = 25C, unless otherwise specified)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Symbol
VDS
Ratings
30
Unit
V
VGS
6.0
V
IDS
0.6
A
Drain Current
IDS-pulse
1.2
A
(50% Duty Pulsed)
Total Power Dissipation Note
Ptot
Tch
Tstg
12.5
150
W
C
C
Channel Temperature
Storage Temperature
65 to +150
Note: Value at TC = 25C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0039EJ0100 Rev.1.00
Apr 25, 2012
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