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NE5550234

更新时间: 2024-01-25 12:46:30
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
16页 1174K
描述
Silicon Power MOS FET

NE5550234 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.83
Is Samacsys:N配置:Single
最大漏极电流 (Abs) (ID):0.6 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):12.5 W子类别:FET General Purpose Powers
表面贴装:YESBase Number Matches:1

NE5550234 数据手册

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Data Sheet  
NE5550234  
Silicon Power MOS FET  
FEATURES  
R09DS0039EJ0100  
Rev.1.00  
Apr 25, 2012  
High Output Power  
: Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)  
High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)  
High Linear gain  
High ESD tolerance  
Suitable for VHF to UHF-BAND Class-AB power amplifier.  
: GL = 23.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 0 dBm)  
APPLICATIONS  
150 MHz Band Radio System  
460 MHz Band Radio System  
900 MHz Band Radio System  
ORDERING INFORMATION  
Part Number  
Order Number  
Package Marking  
Supplying Form  
NE5550234  
NE5550234-AZ  
3-pin  
power  
V5  
12 mm wide embossed taping  
Gate pin faces the perforation side of the tape  
minimold  
(34 PKG)  
(Pb-Free)  
NE5550234-T1  
NE5550234-T1-AZ  
12 mm wide embossed taping  
Gate pin faces the perforation side of the tape  
Qty 1 kpcs/reel  
Remark To order evaluation samples, please contact your nearby sales office.  
Part number for sample order: NE5550234  
ABSOLUTE MAXIMUM RATINGS (TA = 25C, unless otherwise specified)  
Operation in excess of any one of these parameters may result in permanent damage.  
Parameter  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
Symbol  
VDS  
Ratings  
30  
Unit  
V
VGS  
6.0  
V
IDS  
0.6  
A
Drain Current  
IDS-pulse  
1.2  
A
(50% Duty Pulsed)  
Total Power Dissipation Note  
Ptot  
Tch  
Tstg  
12.5  
150  
W
C  
C  
Channel Temperature  
Storage Temperature  
65 to +150  
Note: Value at TC = 25C  
CAUTION  
Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
R09DS0039EJ0100 Rev.1.00  
Apr 25, 2012  
Page 1 of 14  

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