Datasheet > NDS355AN-F169

NDS355AN-F169

更新时间： 2024-11-22 11:11:03

品牌	Logo	应用领域
安森美 - ONSEMI		晶体管场效应晶体管
页数	文件大小	规格书
8页	439K
描述
N 沟道逻辑电平增强型场效应晶体管，30V，1.7A，85mΩ

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NDS355AN-F169 数据手册

ON Semiconductor

Is Now

To learn more about onsemi™, please visit our website at

www.onsemi.com

onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi

product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without

notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,

or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all

liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,

regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application

by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized

for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for

implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,

subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative

Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

12 3 4 5 6 7 8

中文翻译

下载PDF

与NDS355AN-F169相关器件

型号	品牌	获取价格	描述	数据表
NDS355ANL99Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal
NDS355AN-NB9L007A	ONSEMI	获取价格	N 沟道逻辑电平增强型场效应晶体管，30V，1.7A，85mΩ
NDS355ANS62Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal
NDS355N	TYSEMI	获取价格	SUPERSOT-3
NDS355N	FAIRCHILD	获取价格	N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDS355N	ONSEMI	获取价格	N 沟道逻辑电平增强型场效应晶体管 30V，1.6A，125mΩ
NDS355N/D87Z	TI	获取价格	1600mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
NDS355N/L99Z	TI	获取价格	1600mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
NDS355N/S62Z	TI	获取价格	1600mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
NDS355N_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal

与NDS355AN-F169相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

31
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

22
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

51
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

50

产品中心

服务支持

精选活动

关于我们

帮助中心

NDS355AN-F169

NDS355AN-F169 数据手册

与NDS355AN-F169相关器件

与NDS355AN-F169相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NDS355AN-F169

NDS355AN-F169 数据手册

与NDS355AN-F169相关器件

与NDS355AN-F169相关文章

您还可以找

您在本页遇到什么问题？