NDB4060L

更新时间： 2024-11-20 22:29:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管场效应晶体管
页数	文件大小	规格书
6页	71K
描述
N-Channel Logic Level Enhancement Mode Field Effect Transistor

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NDB4060L 数据手册

April 1996

NDP4060L / NDB4060L

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

Features

15A, 60V. R_DS(ON)= 0.1W @ V_GS= 5V

These logic level N-Channel enhancement mode power

field effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This

very high density process has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulses in the

avalanche and commutation modes. These devices are

particularly suited for low voltage applications such as

automotive, DC/DC converters, PWM motor controls,

and other battery powered circuits where fast switching,

low in-line power loss, and resistance to transients are

needed.

Low drive requirements allowing operation directly from logic

drivers. V_GS(TH)< 2.0V.

Critical DC electrical parameters specified at elevated

temperature.

Rugged internal source-drain diode can eliminate the need

for an external Zener diode transient suppressor.

175°C maximum junction temperature rating.

High density cell design for extremely low R_DS(ON)

TO-220 and TO-263 (D²PAK) package for both through hole

and surface mount applications.

________________________________________________________________________________

Absolute Maximum Ratings

Symbol Parameter

T_C= 25°C unless otherwise noted

NDP4060L

NDB4060L

Units

Drain-Source Voltage

V_DSS

V_DGR

Drain-Gate Voltage (R_GS< 1 MW)

V_GSS

Gate-Source Voltage - Continuous

± 16

± 25

- Nonrepetitive (t_P< 50 µs)

Drain Current - Continuous

I_D

- Pulsed

W/°C

°C

P_D

Total Power Dissipation @ T_C= 25°C

Derate above 25°C

0.33

-65 to 175

275

Operating and Storage Temperature

T_J,T_STG

T_L

Maximum lead temperature for soldering

purposes, 1/8" from case for 5 seconds

°C

NDP4060L Rev. B / NDB4060L Rev. C

12 3 4 5 6

中文翻译

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NDB4060L 替代型号

型号	品牌	替代类型	描述	数据表
NDB4060	FAIRCHILD	类似代替	N-Channel Enhancement Mode Field Effect Transistor
NDB4060L	TI	功能相似	15A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

与NDB4060L相关器件

型号	品牌	获取价格	描述	数据表
NDB4060L/L86Z	TI	获取价格	15A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
NDB4060L/L99Z	TI	获取价格	15A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
NDB4060L/S62Z	TI	获取价格	15A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
NDB4060L86Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
NDB4060LL86Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 15A I(D), 60V, 0.08ohm, 1-Element, N-Channel, Silicon, Meta
NDB4060LL99Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 15A I(D), 60V, 0.08ohm, 1-Element, N-Channel, Silicon, Meta
NDB4060LS62Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 15A I(D), 60V, 0.08ohm, 1-Element, N-Channel, Silicon, Meta
NDB406A	TI	获取价格	15A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
NDB406A/L86Z	TI	获取价格	15A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
NDB406AE	TI	获取价格	15A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

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