NDA-322
GaInP/GaAs HBT MMIC DISTRIBUTED
AMPLIFIER DC TO 12GHz
4
Typical Applications
• Narrow and Broadband Commercial and
Military Radio Designs
• Gain Stage or Driver Amplifiers for
MWRadio/Optical Designs
• Linear and Saturated Amplifiers
4
Product Description
The NDA-322 Casacadable Broadband GaInP/GaAs
MMIC amplifier is a low-cost, high-performance solution
for high frequency RF, microwave, or optical amplification
needs. This 50Ω gain block is based on a reliable HBT
proprietary MMIC design, providing unsurpassed perfor-
mance for small-signal applications. Designed with an
external bias resistor, the NDA-322 provides flexibility and
stability. In addition, the NDA-320-D chip was designed
with an additional ground via, providing improved thermal
resistance performance. The NDA-series of distributed
amplifiers provide design flexibility by incorporating AGC
functionality into their designs.
2.94 min
3.28 max
0.025 min
0.125 max
0.50 nom
0.50 nom
1.00 min
1.50 max
Pin 1
Indicator
Pin 1
Indicator
Ground
VCC1
RF OUT
D5
Ground
RF IN
Lid ID
1.70 min
1.91 max
0.98 min
1.02 max
0.38 nom
2.39 min
2.59 max
0.37 min
0.63 max
All Dimensions in Millimeters
Notes:
1. Solder pads are coplanar to within ±0.025 mm.
2. Lid will be centered relative to frontside metallization with a tolerance of ±0.13 mm.
3. Mark to include two characters and dot to reference pin 1.
Optimum Technology Matching® Applied
Package Style: MPGA, Bowtie, 3x3, Ceramic
Si BJT
GaAs HBT
SiGe HBT
GaN HEMT
GaAs MESFET
Si Bi-CMOS
GaInP/HBT
Si CMOS
Features
!
• Reliable, Low-Cost HBT Design
• 9.0dB Gain/P1dB of 13.1dBm @ 2GHz
• Fixed Gain or AGC Operation
• 50Ω I/O Matched for High Freq. Use
• Secondary Ground-Via for Better
Thermal Management
AGC
Pin 1
Indicator
1
8
7
2
9
6
3
4
5
RF OUT
Ground
Ground
RF IN
Ordering Information
NDA-322
GaInP/GaAs HBT MMIC Distributed Amplifier DC to
12GHz
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Functional Block Diagram
Rev A0 020115
4-413