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NCV8570BSN18T1G PDF预览

NCV8570BSN18T1G

更新时间： 2024-11-24 00:45:03
品牌 Logo 应用领域
安森美 - ONSEMI 信息通信管理光电二极管输出元件调节器
页数 文件大小 规格书
20页 646K
描述
200 mA, Ultra Low Noise, High PSRR, LDO, Linear Voltage Regulator

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NCV8570BSN18T1G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：TSOP包装说明：TSSOP, TSOP5/6,.11,37
针数：5Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.39.00.01
Factory Lead Time：1 week风险等级：1.48
可调性：FIXED最大绝对输入电压：6 V
最大输入电压：5.5 V最小输入电压：2.5 V
JESD-30 代码：R-PDSO-G5JESD-609代码：e3
长度：3 mm最大电网调整率：0.00576%
湿度敏感等级：1功能数量：1
输出次数：1端子数量：5
工作温度TJ-Max：125 °C工作温度TJ-Min：-40 °C
最大输出电流 1：0.15 A最大输出电压 1：1.845 V
最小输出电压 1：1.755 V标称输出电压 1：1.8 V
封装主体材料：PLASTIC/EPOXY封装代码：TSSOP
封装等效代码：TSOP5/6,.11,37封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH包装方法：TAPE AND REEL
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
调节器类型：FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR筛选级别：AEC-Q100
座面最大高度：1.1 mm子类别：Other Regulators
表面贴装：YES技术：BICMOS
端子面层：Tin (Sn)端子形式：GULL WING
端子节距：0.95 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED最大电压容差：2.5%
宽度：1.5 mmBase Number Matches：1

NCV8570BSN18T1G 数据手册

 浏览型号NCV8570BSN18T1G的Datasheet PDF文件第2页浏览型号NCV8570BSN18T1G的Datasheet PDF文件第3页浏览型号NCV8570BSN18T1G的Datasheet PDF文件第4页浏览型号NCV8570BSN18T1G的Datasheet PDF文件第5页浏览型号NCV8570BSN18T1G的Datasheet PDF文件第6页浏览型号NCV8570BSN18T1G的Datasheet PDF文件第7页 
NCV8570B  
200 mA, Ultra Low Noise,  
High PSRR, LDO, Linear  
Voltage Regulator  
The NCV8570B is a 200 mA Low Dropout, Linear Voltage  
Regulator with ultra low noise characteristics. It’s low noise combined  
with high Power Supply Rejection Ratio (PSRR) make it especially  
suited for use in RF, audio or imaging applications. The device is  
manufactured in an advanced BiCMOS process to provide a powerful  
combination of low noise and excellent dynamic performance but with  
very low ground current consumption at full loads.  
The NCV8570B is stable with small, low value capacitors allowing  
designers to minimise the total PCB space occupied by the solution.  
The device is packaged in a small 2x2.2mm DFN6 package as well as  
in a TSOP-5 package.  
http://onsemi.com  
DFN6  
MN SUFFIX  
CASE 506BA  
TSOP−5  
SN SUFFIX  
CASE 483  
PIN CONNECTIONS  
EN  
GND  
IN  
1
2
3
6
5
4
BYP  
GND  
OUT  
Features  
Ultra Low Noise (typ. 10 mVrms @ V  
Very High PSRR (typ. 82 dB @ 1 kHz)  
Excellent Line and Load Regulation  
= 1.8 V)  
OUT  
DFN6  
(Top View)  
Stable with Ceramic Output Capacitors as low as 1 mF  
Very Low Ground Current (typ. 75 mA @ I  
Low Sleep Mode Current (max. 1 mA)  
Active Discharge Circuit  
= 200 mA)  
OUT  
1
5
IN  
OUT  
GND  
EN  
Current Limit and Thermal Shutdown Protection  
BYP  
Output Voltage Options:  
TSOP−5  
(Top View)  
1.8 V, 2.5 V, 2.8 V, 3.0 V, 3.3 V  
Contact Factory for Other Voltage Options  
NCV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q100  
Qualified and PPAP Capable  
MARKING DIAGRAMS  
1
XX MG  
G
These are Pb−Free Devices  
Applications  
Satellite and HD Radio  
Portable/Built−in DVD Entertainment Systems  
Noise Sensitive Applications (RF, Video, Audio)  
GPS Systems  
XX = Specific Device Code  
M
= Date Code  
G
= Pb−Free Package*  
(*Note: Microdot may be in either location)  
5
XXXAYWG  
Camera for Lane Change Detection and Reverse View  
G
1
DFN6 2x2.2  
V
V
IN  
OUT  
XXX = Specific Device Code  
3
1
4
6
IN  
OUT  
BYP  
A
Y
W
G
= Assembly Location  
= Year  
= Work Week  
NCV8570B  
EN  
ON  
GND  
C
C
IN  
OUT  
1 mF  
= Pb−Free Package*  
C
10 nF  
noise  
OFF  
1 mF  
2, 5, EPAD  
(*Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 18 of this data sheet.  
Figure 1. NCV8570B Typical Application Schematic  
Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
June, 2013 − Rev. 3  
NCV8570B/D  
1234567...20

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