5秒后页面跳转
NCV8570BSN30T1G PDF预览

NCV8570BSN30T1G

更新时间: 2024-11-24 00:45:03
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
20页 646K
描述
200 mA, Ultra Low Noise, High PSRR, LDO, Linear Voltage Regulator

NCV8570BSN30T1G 数据手册

 浏览型号NCV8570BSN30T1G的Datasheet PDF文件第2页浏览型号NCV8570BSN30T1G的Datasheet PDF文件第3页浏览型号NCV8570BSN30T1G的Datasheet PDF文件第4页浏览型号NCV8570BSN30T1G的Datasheet PDF文件第5页浏览型号NCV8570BSN30T1G的Datasheet PDF文件第6页浏览型号NCV8570BSN30T1G的Datasheet PDF文件第7页 
NCV8570B  
200 mA, Ultra Low Noise,  
High PSRR, LDO, Linear  
Voltage Regulator  
The NCV8570B is a 200 mA Low Dropout, Linear Voltage  
Regulator with ultra low noise characteristics. It’s low noise combined  
with high Power Supply Rejection Ratio (PSRR) make it especially  
suited for use in RF, audio or imaging applications. The device is  
manufactured in an advanced BiCMOS process to provide a powerful  
combination of low noise and excellent dynamic performance but with  
very low ground current consumption at full loads.  
The NCV8570B is stable with small, low value capacitors allowing  
designers to minimise the total PCB space occupied by the solution.  
The device is packaged in a small 2x2.2mm DFN6 package as well as  
in a TSOP-5 package.  
http://onsemi.com  
DFN6  
MN SUFFIX  
CASE 506BA  
TSOP5  
SN SUFFIX  
CASE 483  
PIN CONNECTIONS  
EN  
GND  
IN  
1
2
3
6
5
4
BYP  
GND  
OUT  
Features  
Ultra Low Noise (typ. 10 mVrms @ V  
Very High PSRR (typ. 82 dB @ 1 kHz)  
Excellent Line and Load Regulation  
= 1.8 V)  
OUT  
DFN6  
(Top View)  
Stable with Ceramic Output Capacitors as low as 1 mF  
Very Low Ground Current (typ. 75 mA @ I  
Low Sleep Mode Current (max. 1 mA)  
Active Discharge Circuit  
= 200 mA)  
OUT  
1
5
IN  
OUT  
GND  
EN  
Current Limit and Thermal Shutdown Protection  
BYP  
Output Voltage Options:  
TSOP5  
(Top View)  
1.8 V, 2.5 V, 2.8 V, 3.0 V, 3.3 V  
Contact Factory for Other Voltage Options  
NCV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ100  
Qualified and PPAP Capable  
MARKING DIAGRAMS  
1
XX MG  
G
These are PbFree Devices  
Applications  
Satellite and HD Radio  
Portable/Builtin DVD Entertainment Systems  
Noise Sensitive Applications (RF, Video, Audio)  
GPS Systems  
XX = Specific Device Code  
M
= Date Code  
G
= PbFree Package*  
(*Note: Microdot may be in either location)  
5
XXXAYWG  
Camera for Lane Change Detection and Reverse View  
G
1
DFN6 2x2.2  
V
V
IN  
OUT  
XXX = Specific Device Code  
3
1
4
6
IN  
OUT  
BYP  
A
Y
W
G
= Assembly Location  
= Year  
= Work Week  
NCV8570B  
EN  
ON  
GND  
C
C
IN  
OUT  
1 mF  
= PbFree Package*  
C
10 nF  
noise  
OFF  
1 mF  
2, 5, EPAD  
(*Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 18 of this data sheet.  
Figure 1. NCV8570B Typical Application Schematic  
Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
June, 2013 Rev. 3  
NCV8570B/D  

与NCV8570BSN30T1G相关器件

型号 品牌 获取价格 描述 数据表
NCV8570BSN33T1G ONSEMI

获取价格

200 mA, Ultra Low Noise, High PSRR, LDO, Linear Voltage Regulator
NCV8570MN180R2G ONSEMI

获取价格

200 mA, Ultra Low Noise, High PSRR, BiCMOS RF LDO Regulator
NCV8570MN250R2G ONSEMI

获取价格

200 mA, Ultra Low Noise, High PSRR, BiCMOS RF LDO Regulator
NCV8570MN275R2G ONSEMI

获取价格

200 mA, Ultra Low Noise, High PSRR, BiCMOS RF LDO Regulator
NCV8570MN280R2G ONSEMI

获取价格

200 mA, Ultra Low Noise, High PSRR, BiCMOS RF LDO Regulator
NCV8570MN300R2G ONSEMI

获取价格

200 mA, Ultra Low Noise, High PSRR, BiCMOS RF LDO Regulator
NCV8570MN330R2G ONSEMI

获取价格

200 mA, Ultra Low Noise, High PSRR, BiCMOS RF LDO Regulator
NCV8570SN18T1G ONSEMI

获取价格

200 mA, Ultra Low Noise, High PSRR, BiCMOS RF LDO Regulator
NCV8570SN25T1G ONSEMI

获取价格

200 mA, Ultra Low Noise, High PSRR, BiCMOS RF LDO Regulator
NCV8570SN275T1G ONSEMI

获取价格

200 mA, Ultra Low Noise, High PSRR, BiCMOS RF LDO Regulator