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NCV8570SN18T1G

更新时间： 2024-11-22 11:56:11
品牌 Logo 应用领域
安森美 - ONSEMI 线性稳压器IC调节器电源电路光电二极管输出元件信息通信管理
页数 文件大小 规格书
12页 182K
描述
200 mA, Ultra Low Noise, High PSRR, BiCMOS RF LDO Regulator

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中文翻译

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NCV8570SN18T1G 技术参数

是否无铅： 不含铅生命周期：End Of Life
零件包装代码：TSOP包装说明：TSSOP,
针数：5Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.39.00.01
风险等级：5.64Is Samacsys：N
最大输入电压：5.5 V最小输入电压：2.5 V
JESD-30 代码：R-PDSO-G5JESD-609代码：e3
长度：3 mm湿度敏感等级：1
功能数量：1端子数量：5
工作温度TJ-Max：150 °C最大输出电流 1：0.2 A
最大输出电压 1：1.854 V最小输出电压 1：1.746 V
标称输出电压 1：1.8 V封装主体材料：PLASTIC/EPOXY
封装代码：TSSOP封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified调节器类型：FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR
座面最大高度：1.1 mm表面贴装：YES
技术：BICMOS端子面层：Tin (Sn)
端子形式：GULL WING端子节距：0.95 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：1.5 mmBase Number Matches：1

NCV8570SN18T1G 数据手册

 浏览型号NCV8570SN18T1G的Datasheet PDF文件第2页浏览型号NCV8570SN18T1G的Datasheet PDF文件第3页浏览型号NCV8570SN18T1G的Datasheet PDF文件第4页浏览型号NCV8570SN18T1G的Datasheet PDF文件第5页浏览型号NCV8570SN18T1G的Datasheet PDF文件第6页浏览型号NCV8570SN18T1G的Datasheet PDF文件第7页 
NCV8570  
200 mA, Ultra Low Noise,  
High PSRR, BiCMOS RF LDO  
Regulator  
Noise sensitive RF applications such as Power Amplifiers in satellite  
radios, infotainment equipment, and precision instrumentation for  
automotive applications require very clean power supplies.  
The NCV8570 is 200 mA LDO that provides the engineer with a  
very stable, accurate voltage with ultra low noise and very high Power  
Supply Rejection Ratio (PSRR) suitable for RF applications. In order  
to optimize performance for battery operated portable applications,  
the NCV8570 employs an advanced BiCMOS process to combine the  
benefits of low noise and superior dynamic performance of bipolar  
elements with very low ground current consumption at full loads  
offered by CMOS.  
http://onsemi.com  
MARKING  
DIAGRAMS  
6
DFN6, 2x2.2  
MN SUFFIX  
CASE 506BA  
XXMG  
G
1
XX = Specific Device Code  
M
= Date Code  
= Pb−Free Package  
G
Furthermore, in order to provide a small footprint for  
space−conscious applications, the NCV8570 is stable with small, low  
value capacitors and is available in very small DFN6 2x2.2 and  
TSOP−5 packages.  
(Note: Microdot may be in either location)  
5
Features  
TSOP−5  
XXXAYWG  
SN SUFFIX  
• Output Voltage Options:  
G
5
CASE 483  
− 1.8 V, 2.5 V, 2.75 V, 2.8 V, 3.0 V, 3.3 V  
− Contact Factory for Other Voltage Options  
1
1
XXX = Specific Device Code  
• Output Current Limit 200 mA  
A
Y
W
G
= Assembly Location  
= Year  
= Work Week  
• Ultra Low Noise (typ 15 mV  
)
rms  
• Very High PSRR (typ 80 dB)  
= Pb−Free Package  
• Stable with Ceramic Output Capacitors as low as 1 mF  
• Low Sleep Mode Current (max 1 mA)  
• Active Discharge Circuit  
(Note: Microdot may be in either location)  
• Current Limit Protection  
PIN ASSIGNMENTS  
• Thermal Shutdown Protection  
• AEC Qualified  
1
2
3
6
5
4
C
noise  
CE  
• PPAP Capable  
• These are Pb−Free Devices  
GND  
GND  
V
out  
V
in  
Typical Applications  
(Top View)  
• Satellite and HD Radio  
1
5
• Noise Sensitive Applications (Video, Audio)  
• Analog Power Supplies  
V
out  
V
in  
• Portable/Built−in DVD Entertainment Systems  
• GPS  
GND  
CE  
C
noise  
V
(Top View)  
V
in  
V
out  
V
out  
in  
NCV8570  
C
GND  
CE  
noise  
C
noise  
C
C
in  
out  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 10 of this data sheet.  
Figure 1. Typical Application Schematic  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
November, 2009 − Rev. 3  
NCV8570/D  
1234567...12

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NCV8570SN18T1G 替代型号

型号 品牌 替代类型 描述 数据表
NCV8570SN25T1G ONSEMI

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 		300 mA High Performance CMOS LDO Regulator with Enable and Enhanced ESD
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