Datasheet > NCV5106BDR2G

NCV5106BDR2G

更新时间： 2024-11-24 01:13:31

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
17页	110K
描述
High Voltage, High and Low Side Driver

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NCV5106BDR2G 数据手册

NCV5106A, NCV5106B

High Voltage, High and Low

Side Driver

The NCV5106 is a high voltage gate driver IC providing two

outputs for direct drive of 2 N−channel power MOSFETs or IGBTs

arranged in a half−bridge configuration version B (version B on

demand only) or any other high−side + low−side configuration

version A.

www.onsemi.com

It uses the bootstrap technique to ensure a proper drive of the

high−side power switch. The driver works with 2 independent inputs.

MARKING

DIAGRAMS

Features

• High Voltage Range: Up to 600 V

SOIC−8

D SUFFIX

CASE 751

V5106x

ALYW

• dV/dt Immunity 50 V/nsec

• Negative Current Injection Characterized Over the Temperature Range

• Gate Drive Supply Range from 10 V to 20 V

• High and Low Drive Outputs

V5106x

= Specific Device Code

= A or B version

= Assembly Location

= Wafer Lot

= Year

= Work Week

• Output Source / Sink Current Capability 250 mA / 500 mA

• 3.3 V and 5 V Input Logic Compatible

• Up to V Swing on Input Pins

• Extended Allowable Negative Bridge Pin Voltage Swing to −10 V

for Signal Propagation

= Pb−Free Package

• Matched Propagation Delays Between Both Channels

• Outputs in Phase with the Inputs

• Independent Logic Inputs to Accommodate All Topologies (Version A)

• Cross Conduction Protection with 100 ns Internal Fixed Dead Time

(Version B − on demand only)

PINOUT INFORMATION

VBOOT

VCC

IN_HI

IN_LO

GND

DRV_HI

BRIDGE

DRV_LO

SOIC−8

• Under V LockOut (UVLO) for Both Channels

• Pin−to−Pin Compatible with Industry Standards

• These are Pb−Free Devices

ORDERING INFORMATION

See detailed ordering and shipping information on page 16 of

this data sheet.

Typical Applications

• Half−Bridge Power Converters

• Any Complementary Drive Converters (Asymmetrical Half−Bridge,

Active Clamp) (A Version Only).

• Full−Bridge Converters

Semiconductor Components Industries, LLC, 2017

Publication Order Number:

February, 2017 − Rev. 0

NCV5106/D

12 3 4 5 6 7...17

中文翻译

下载PDF

与NCV5106BDR2G相关器件

型号	品牌	获取价格	描述	数据表
NCV511	ONSEMI	获取价格	150 mA CMOS Low Iq Low-Dropout Voltage Regulator
NCV51190MNTAG	ONSEMI	获取价格	1.5 A DDR 端接稳压器
NCV51198PDR2G	ONSEMI	获取价格	1.5 A DDR 端接稳压器
NCV51199PDR2G	ONSEMI	获取价格	2 A DDR 端接稳压器
NCV511SN15T1G	ONSEMI	获取价格	150 mA CMOS Low Iq Low-Dropout Voltage Regulator
NCV511SN25T1G	ONSEMI	获取价格	150 mA CMOS Low Iq Low-Dropout Voltage Regulator
NCV51200MLTXG	ONSEMI	获取价格	Termination Regulator
NCV51200MNTXG	ONSEMI	获取价格	Termination Regulator
NCV51200MWTXG	ONSEMI	获取价格	Termination Regulator
NCV51400MNTXG	ONSEMI	获取价格	Termination Regulator