Datasheet > NCV51511

NCV51511

更新时间： 2024-11-24 01:16:43

品牌	Logo	应用领域
安森美 - ONSEMI		栅
页数	文件大小	规格书
15页	224K
描述
High-Frequency, High Side and Low Side Gate Driver

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NCV51511 数据手册

NCV51511

High-Frequency, High Side

and Low Side Gate Driver

The NCV51511 is high side and low side gate−drive IC designed for

high−voltage, high−speed, driving MOSFETs operating up to 80 V.

The NCV51511 integrates a driver IC and a bootstrap diode. The

driver IC features low delay time and matched PWM input

propagation delays, which further enhance the performance of the

part.

www.onsemi.com

The high speed dual gate drivers are designed to drive both the

high−side and low−side of N−Channel MOSFETs in a half bridge or

synchronous buck configuration. The floating high−side driver is

capable of operating with supply voltages of up to 80 V. In the dual

gate driver, the high side and low side each have independent inputs to

allow maximum flexibility of input control signals in the application.

SOIC8−EP

CASE 751AC

MARKING DIAGRAM

The PWM input signal (high level) can be 3.3 V, 5 V or up to V

logic input to cover all possible applications. The bootstrap diode for

the high−side driver bias supply is integrated in the chip. The

high−side driver is referenced to the switch node (HS) which is

typically the source pin of the high−side MOSFET and drain pin of the

V51511

ALYWG

low−side MOSFET. The low−side driver is referenced to V which is

typically ground. The functions contained are the input stages, UVLO

protection, level shift, bootstrap diode, and output driver stages.

V51511 = Specific Device Code

= Assembly Location

= Wafer Lot

Features

= Year

= Work Week

= Pb−Free Device

• Drives two N−Channel MOSFETs in High & Low Side

• Integrated Bootstrap Diode for High Side Gate Drive

• Bootstrap Supply Voltage Range up to 100 V

• 3 A Source, 6 A Sink Output Current Capability

• Drives 1nF Load with Typical Rise/Fall Times of 6 ns/4 ns

• TTL Compatible Input Thresholds

• Wide Supply Voltage Range 8 V to 16 V (Absolute Maximum 18 V)

• Fast Propagation Delay Times (Typ. 30 ns)

• 2 ns Delay Matching (Typical)

• Under−Voltage Lockout (UVLO) Protection for Drive Voltage

• Industry−Standard Pinouts, SOIC 8 with Exposed PAD

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 12 of this data sheet.

• Automotive Qualified to AEC−Q100:

♦ Operating temperature range from −40°C to 150°C

♦ Reliability at 150°C for 2,016 hrs

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Typical Applications

• 48 V Converters for HEV/EV

• Half−Bridge and Full−Bridge Converters

• Synchronous−Buck Converters

Publication Order Number:

April, 2018 − Rev. 0

NCV51511/D

12 3 4 5 6 7...15

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与NCV51511相关器件

型号	品牌	获取价格	描述	数据表
NCV51511PDR2G	ONSEMI	获取价格	High-Frequency, High Side and Low Side Gate Driver
NCV51513AAMNTWG	ONSEMI	获取价格	Automotive 130 V, 2.0/3.0 A High and Low Side Drivers with Dead Time & Interlock
NCV51513ABMNTWG	ONSEMI	获取价格	Automotive 130 V, 2.0/3.0 A High and Low Side Drivers with Dead Time & Interlock
NCV51561BBDWR2G	ONSEMI	获取价格	5 kVRMS Isolated Dual Channel 4.5/9 A Automotive Gate Driver
NCV51561DADWR2G	ONSEMI	获取价格	5 kVRMS Isolated Dual Channel 4.5/9 A Automotive Gate Driver
NCV51563BBDWR2G	ONSEMI	获取价格	5 kVRMS Isolated Dual Channel 4.5/9 A Automotive Gate Driver with High Channel-to-Channel
NCV51563CADWR2G	ONSEMI	获取价格	5 kVRMS Isolated Dual Channel 4.5/9 A Automotive Gate Driver with High Channel-to-Channel
NCV51705	ONSEMI	获取价格	Single 6 A High-Speed, Low-Side SiC MOSFET Driver
NCV51705D	ONSEMI	获取价格	Single 6 A High-Speed, Low-Side SiC MOSFET Driver
NCV51705MNTWG	ONSEMI	获取价格	Single 6 A High-Speed, Low-Side SiC MOSFET Driver

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