Datasheet > NCV51705

NCV51705

更新时间： 2024-11-27 02:52:59

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
19页	392K
描述
Single 6 A High-Speed, Low-Side SiC MOSFET Driver

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中文翻译

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数据手册

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NCV51705 数据手册

NCV51705

Single 6 A High-Speed,

Low-Side SiC MOSFET

Driver

The NCV51705 driver is designed to primarily drive SiC MOSFET

transistors. To achieve the lowest possible conduction losses, the

driver is capable to deliver the maximum allowable gate voltage to the

SiC MOSFET device. By providing high peak current during turn−on

and turn−off, switching losses are also minimized. For improved

reliability, dV/dt immunity and even faster turn−off, the NCV51705

can utilize its on−board charge pump to generate a user selectable

negative voltage rail.

For full compatibility and to minimize the complexity of the bias

solution in isolated gate drive applications the NCV51705 also

provides an externally accessible 5 V rail to power the secondary side

of digital or high speed opto isolators.

www.onsemi.com

MARKING

DIAGRAM

XXXXX

ALYWG

QFN24

WETTABLE FLANK

CASE 484AE

XXXXXX = Specific Device Code

= Assembly Location

= Wafer Lot

= Year

= Work Week

= Pb−Free Package

The NCV51705 offers important protection functions such as

under−voltage lockout monitoring for the bias power.

Features

• Automotive Qualified to AEC−Q100 with Grade 1 Temperature

(Note: Microdot may be in either location)

Range

• High Peak Output Current with Split Output Stages to Allow

Independent Turn−ON/Turn−OFF Adjustment;

♦ Source Capability: 6 A

PIN CONNECTIONS

♦ Sink Capability: 6 A

• Extended Positive Voltage Rating for Efficient SiC MOSFET

Operation during the Conduction Period

• Adjustable, On−board Regulated Charge Pump

• Negative Voltage Drive for Fast Turn−off

• Built−in Negative Charge Pump

IN+

IN−

18 OUTSRC

17 OUTSRC

16 PGND

XEN

NCV51705

(Top View )

SGND

VEESET

VCH

15 PGND

• Accessible 5 V Reference / Bias Rail for Digital Oscillator Supply

• Adjustable Under−Voltage Lockout

• Desaturation Function

14 OUTSNK

13 OUTSNK

• Small & Low Parasitic Inductance QFN24 Package with Wettable

Flank

Typical Applications

ORDERING INFORMATION

• Driving SiC MOSFET for Automotive Applications

• Automotive Inverters, Converter, and Motor Drivers

• PFC, AC to DC and DC to DC Converters

†

Device

Package

Shipping

NCV51705MNTWG

QFN24

(Pb−Free)

3000 / Tape &

Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

April, 2019 − Rev. 1

NCV51705/D

12 3 4 5 6 7...19

中文翻译

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与NCV51705相关器件

型号	品牌	获取价格	描述	数据表
NCV51705D	ONSEMI	获取价格	Single 6 A High-Speed, Low-Side SiC MOSFET Driver
NCV51705MNTWG	ONSEMI	获取价格	Single 6 A High-Speed, Low-Side SiC MOSFET Driver
NCV5171	ONSEMI	获取价格	1.5 A 280 kHz Boost Regulators
NCV5171_10	ONSEMI	获取价格	1.5 A 280 kHz/560 kHz Boost Regulators
NCV5171_11	ONSEMI	获取价格	1.5 A 280 kHz/560 kHz Boost Regulators
NCV5171EDR2G	ONSEMI	获取价格	1.5 A 280 kHz Boost Regulators
NCV5173EDR2G	ONSEMI	获取价格	1.5 A 280 kHz/560 kHz Boost Regulators
NCV5183	ONSEMI	获取价格	High Voltage High Current High and Low Side Driver
NCV5183DR2G	ONSEMI	获取价格	High Voltage High Current High and Low Side Driver
NCV5230DR2G	ONSEMI	获取价格	运算放大器，低电压

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