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NCV33079DR2G PDF预览

NCV33079DR2G

更新时间: 2024-11-25 01:18:43
品牌 Logo 应用领域
安森美 - ONSEMI 放大器光电二极管
页数 文件大小 规格书
14页 421K
描述
Low Noise Dual/Quad Operational Amplifiers

NCV33079DR2G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SOIC包装说明:SOP,
针数:14Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
Factory Lead Time:4 weeks风险等级:5.66
放大器类型:OPERATIONAL AMPLIFIER最大平均偏置电流 (IIB):0.8 µA
标称共模抑制比:100 dBJESD-30 代码:R-PDSO-G14
JESD-609代码:e3长度:8.65 mm
湿度敏感等级:1负供电电压上限:-18 V
标称负供电电压 (Vsup):-15 V功能数量:4
端子数量:14最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
座面最大高度:1.75 mm标称压摆率:7 V/us
子类别:Operational Amplifier供电电压上限:18 V
标称供电电压 (Vsup):15 V表面贴装:YES
技术:BIPOLAR温度等级:INDUSTRIAL
端子面层:Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED标称均一增益带宽:16000 kHz
宽度:3.9 mmBase Number Matches:1

NCV33079DR2G 数据手册

 浏览型号NCV33079DR2G的Datasheet PDF文件第2页浏览型号NCV33079DR2G的Datasheet PDF文件第3页浏览型号NCV33079DR2G的Datasheet PDF文件第4页浏览型号NCV33079DR2G的Datasheet PDF文件第5页浏览型号NCV33079DR2G的Datasheet PDF文件第6页浏览型号NCV33079DR2G的Datasheet PDF文件第7页 
MC33078, MC33079,  
NCV33078, NCV33079  
Low Noise Dual/Quad  
Operational Amplifiers  
The MC33078/9 series is a family of high quality monolithic  
amplifiers employing Bipolar technology with innovative high  
performance concepts for quality audio and data signal processing  
applications. This family incorporates the use of high frequency PNP  
input transistors to produce amplifiers exhibiting low input voltage  
noise with high gain bandwidth product and slew rate. The all NPN  
output stage exhibits no deadband crossover distortion, large output  
voltage swing, excellent phase and gain margins, low open loop high  
frequency output impedance and symmetrical source and sink AC  
frequency performance.  
http://onsemi.com  
MARKING  
DIAGRAMS  
DUAL  
8
MC33078P  
AWL  
PDIP8  
P SUFFIX  
CASE 626  
The MC33078/9 family offers both dual and quad amplifier  
versions and is available in the plastic DIP and SOIC packages (P and  
D suffixes).  
YYWWG  
8
1
8
1
Features  
Dual Supply Operation: $5.0 V to $18 V  
SOIC8  
D SUFFIX  
CASE 751  
33078  
ALYW  
Ǹ
Low Voltage Noise: 4.5 nV/ Hz  
8
G
Low Input Offset Voltage: 0.15 mV  
Low T.C. of Input Offset Voltage: 2.0 mV/°C  
Low Total Harmonic Distortion: 0.002%  
High Gain Bandwidth Product: 16 MHz  
High Slew Rate: 7.0 V/ms  
1
1
QUAD  
14  
PDIP14  
P SUFFIX  
CASE 646  
MC33079P  
AWLYYWWG  
High Open Loop AC Gain: 800 @ 20 kHz  
Excellent Frequency Stability  
Large Output Voltage Swing: +14.1 V/ 14.6 V  
ESD Diodes Provided on the Inputs  
NCV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
14  
1
1
14  
SOIC14  
D SUFFIX  
CASE 751A  
MC33079DG  
AWLYWW  
14  
1
1
V
CC  
R2  
Q4  
D1  
A
= Assembly Location  
Q9  
WL, L = Wafer Lot  
YY, Y = Year  
WW, W = Work Week  
G or G = PbFree Package  
Q3 Q5  
Q11  
D3  
C2  
R7  
Neg  
Pos  
Q3  
Amplifier  
Biasing  
J1  
Q8  
C3 R9  
D4  
Q6  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 10 of this data sheet.  
V
out  
Q12  
Q10  
Q2  
D2  
R6  
R4  
Q7  
Z1  
Q1  
R5  
R1  
R3  
C1  
V
EE  
Figure 1. Representative Schematic Diagram  
(Each Amplifier)  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
November, 2011 Rev. 9  
MC33078/D  

NCV33079DR2G 替代型号

型号 品牌 替代类型 描述 数据表
NCV33204DR2G ONSEMI

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