是否无铅: | 含铅 | 生命周期: | Obsolete |
零件包装代码: | SOIC | 包装说明: | PLASTIC, SOIC-8 |
针数: | 8 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.39.00.01 |
风险等级: | 5.31 | Is Samacsys: | N |
可调阈值: | NO | 模拟集成电路 - 其他类型: | POWER SUPPLY SUPPORT CIRCUIT |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e0 |
长度: | 4.9 mm | 信道数量: | 1 |
功能数量: | 1 | 端子数量: | 8 |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | SOP |
封装等效代码: | SOP8,.25 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 3 V | 认证状态: | Not Qualified |
座面最大高度: | 1.75 mm | 子类别: | Power Management Circuits |
最大供电电流 (Isup): | 0.04 mA | 最大供电电压 (Vsup): | 10 V |
最小供电电压 (Vsup): | 1 V | 标称供电电压 (Vsup): | 2.4 V |
表面贴装: | YES | 技术: | BIPOLAR |
温度等级: | AUTOMOTIVE | 端子面层: | Tin/Lead (Sn80Pb20) |
端子形式: | GULL WING | 端子节距: | 1.27 mm |
端子位置: | DUAL | 阈值电压标称: | +2.7V |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 3.9 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
NCV33164D-3R2G | ONSEMI |
完全替代 |
MICROPOWER UNDERVOLTAGE SENSING CIRCUITS |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NCV33164D-3R2G | ONSEMI |
获取价格 |
MICROPOWER UNDERVOLTAGE SENSING CIRCUITS | |
NCV33164D-5R2 | ONSEMI |
获取价格 |
MICROPOWER UNDERVOLTAGE SENSING CIRCUITS | |
NCV33164D-5R2G | ONSEMI |
获取价格 |
MICROPOWER UNDERVOLTAGE SENSING CIRCUITS | |
NCV33172 | ONSEMI |
获取价格 |
Single Supply 3.0 V to 44 V, Low Power Operational Amplifiers | |
NCV33172DR2 | ONSEMI |
获取价格 |
Single Supply 3.0 V to 44 V, Low Power Operational Amplifiers | |
NCV33172DR2** | ONSEMI |
获取价格 |
Single Supply 3.0 V to 44 V, Low Power Operational Amplifiers | |
NCV33172DR2G | ONSEMI |
获取价格 |
Low Power Operational Amplifiers | |
NCV33174DTBR2G | ONSEMI |
获取价格 |
Low Power Operational Amplifiers | |
NCV331SN3T1G | ONSEMI |
获取价格 |
比较器,单电源,低电压 | |
NCV33201VDR2G | ONSEMI |
获取价格 |
Low Voltage, Rail-to-Rail Operational Amplifiers |