Datasheet > NCES120P075T4

NCES120P075T4

更新时间： 2024-04-09 19:00:37

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
9页	821K
描述
????新洁能提供的650V和1200V碳化硅功率MOSFET产品，具有电流密度大、击穿电压高、损耗低等特点。同时，该系列产品具有优良的短路能力，为应用中的突发状况提供充足的裕量。广泛应用于新能源

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NCES120P075T4 数据手册

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NCES120P075T4

Thermal Characteristic

Value

Symbol

Parameter

Units

Min

Typ

Max

R_θJC

Thermal Resistance, Junction to case

0.82

1.03

°C/W

Electrical Characteristics (T_C=25°C unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

On Characteristics ^{(Note 3)}

Gate Threshold Voltage

Drain-Source On-State Resistance

Gate input resistance

BV_DSS

I_DSS

V_GS=0V I_D=100uA

V_DS=1200V,V_GS=0V

V_GS=-4V / +21V,V_DS=0V

1200

μA

I_GSS

±100

V_GS(th)

R_DS(ON)

R_G

V_DS=V_GS,I_D=1mA

V_GS=18V, I_D=20A

f=1MHZ, open drain

V_DS=10V, I_D=20A

1.9

mΩ

Forward Transconductance

Dynamic Characteristics ^{(Note 4)}

Input Capacitance

g_FS

C_lss

C_oss

C_rss

1330

V_DS=800V,V_GS=0V,

f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics ^{(Note 4)}

Turn-on Delay Time

t_d(on)

t_r

t_d(off)

t_f

Turn-on Rise Time

V_DD=800V,I_D=20A V_GS=+18V

/ 0V,R_G=2.7Ω,L=200μH

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_g

Q_gs

Q_gd

V_DS=800V,I_D=20A,

V_GS=18V

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics

Diode Forward Voltage ^{(Note 3)}

Reverse Recovery Time

Reverse Recovery Charge

Peak reverse recovery current

V_SD

t_rr

V_GS=0V,I_D=20A

3.9

215

T_J= 25°C, I_F=20A, V_R=800V,

di/dt = 1000A/μs^(Note3)

Q_rr

I_rrm

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. PW ≤ 10μs, Duty cycle ≤ 1%

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

Wuxi NCE Power Co., Ltd

Page

V1.0

http://www.ncepower.com

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