NCEP045N85
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
BVDSS
IDSS
VGS=0V ID=250μA
VDS=85V,VGS=0V
VGS=±20V,VDS=0V
85
-
-
1
V
-
-
μA
nA
IGSS
-
±100
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=20A
VDS=5V,ID=40A
2.0
-
3.0
3.7
70
4.0
4.5
-
V
mΩ
S
Clss
Coss
Crss
-
-
-
3600
775
35
-
-
-
PF
PF
PF
VDS=40V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
Turn-on Delay Time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
21
20
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
VDD=40V,ID=20A
VGS=10V,RG=1.6Ω
Turn-Off Delay Time
54
Turn-Off Fall Time
15
Total Gate Charge
Qg
Qgs
Qgd
61
VDS=40V,ID=20A,
VGS=10V
Gate-Source Charge
17
Gate-Drain Charge
16.5
Drain-Source Diode Characteristics
Diode Forward Voltage
Diode Forward Current
Reverse Recovery Time
Reverse Recovery Charge
VSD
IS
VGS=0V,IS=20A
-
-
-
-
1.2
V
A
-
150
trr
72
-
-
nS
nC
TJ = 25°C, IF =75A
di/dt = 100A/μs
Qrr
110
Notes:
1. EAS condition : Tj=25℃,VDD=40V,VG=10V,L=0.5mH,Rg=25Ω
2. Guaranteed by design, not subject to production
3. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
Wuxi NCE Power Co., Ltd
Page2
V1.0
http://www.ncepower.com