Datasheet > NCE6075

NCE6075

更新时间： 2022-12-22 07:26:17

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
7页	375K
描述
NCE N-Channel Enhancement Mode Power MOSFET

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NCE6075

Thermal Characteristic

Thermal Resistance,Junction-to-Case(Note 2)

R_θJC

1.25

℃/W

Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

On Characteristics (Note 3)

Gate Threshold Voltage

Drain-Source On-State Resistance

Forward Transconductance

Dynamic Characteristics (Note4)

Input Capacitance

BV_DSS

I_DSS

V_GS=0V I_D=250μA

V_DS=60V,V_GS=0V

V_GS=±20V,V_DS=0V

μA

I_GSS

±100

V_GS(th)

R_DS(ON)

g_FS

V_DS=V_GS,I_D=250μA

V_GS=10V, I_D=30A

V_DS=25V,I_D=30A

mΩ

8.4

C_lss

C_oss

C_rss

1300

350

V_DS=25V,V_GS=0V,

Output Capacitance

F=1.0MHz

Reverse Transfer Capacitance

Switching Characteristics (Note 4)

Turn-on Delay Time

t_d(on)

t_r

t_d(off)

t_f

Turn-on Rise Time

V_DD=28V,I_D=30A

V_GS=10V,R_GEN=4.5Ω

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_g

Q_gs

Q_gd

V_DS=44V,I_D=30A,

Gate-Source Charge

V_GS=10V

Gate-Drain Charge

Drain-Source Diode Characteristics

Diode Forward Voltage (Note 3)

Diode Forward Current (Note 2)

Reverse Recovery Time

V_SD

I_S

V_GS=0V,I_S=30A

1.2

t_rr

TJ = 25°C, IF =30A

100

200

Reverse Recovery Charge

di/dt = 100A/μs(Note3)

Qrr

t_on

150

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

5. EAS condition：Tj=25℃,V_DD=30V,V_G=10V,L=0.5mH,Rg=25Ω

Wuxi NCE Power Semiconductor Co., Ltd

Page 2

v1.0

123 4 5 6 7

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