http://www.ncepower.com
NCE60H30T
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE60H30T uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =60V,ID =300A
RDS(ON) <3.1mΩ @ VGS=10V
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
100% UIS TESTED!
TO-247 top view
100% ΔVds TESTED!
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE60H30T
NCE60H30T
TO-247
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
60
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
±20
VGS
300
210
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
A
900
A
Maximum Power Dissipation(Note 1)
Derating factor
400
W
PD
2.67
3125
W/℃
mJ
℃
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
-55 To 175
TJ,TSTG
Thermal Characteristic
Wuxi NCE Power Co., Ltd
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