http://www.ncepower.com
NCE6080AI
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE6080AI uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =60V,ID =80A
RDS(ON)=5.5mΩ (typical) @ VGS=10V
RDS(ON)=6.5mΩ (typical) @ VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Schematic diagram
Application
● PWM
Marking and pin assignment
● Load Switching
100% UIS TESTED!
100% ΔVds TESTED!
TO-251 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE6080AI
NCE6080AI
TO-251-3L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
60
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
±20
VGS
80
56.5
A
ID
ID (100℃)
IDM
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
A
320
A
Maximum Power Dissipation
110
W
PD
Derating factor
0.73
W/℃
mJ
℃
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
390
-55 To 175
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
1.36
℃/W
Wuxi NCE Power Co., Ltd
Page1
V3.0