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NCE6080AI PDF预览

NCE6080AI

更新时间: 2024-03-03 10:10:00
品牌 Logo 应用领域
新洁能 - NCEPOWER 开关
页数 文件大小 规格书
8页 757K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型(Trench)功率MOSFET产品,采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

NCE6080AI 数据手册

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http://www.ncepower.com  
NCE6080AI  
NCE N-Channel Enhancement Mode Power MOSFET  
Description  
The NCE6080AI uses advanced trench technology and  
design to provide excellent RDS(ON) with low gate charge. It  
can be used in a wide variety of applications.  
General Features  
VDS =60V,ID =80A  
RDS(ON)=5.5mΩ (typical) @ VGS=10V  
RDS(ON)=6.5mΩ (typical) @ VGS=4.5V  
High density cell design for ultra low Rdson  
Fully characterized avalanche voltage and current  
Good stability and uniformity with high EAS  
Excellent package for good heat dissipation  
Schematic diagram  
Application  
PWM  
Marking and pin assignment  
Load Switching  
100% UIS TESTED!  
100% ΔVds TESTED!  
TO-251 top view  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
NCE6080AI  
NCE6080AI  
TO-251-3L  
-
-
-
Absolute Maximum Ratings (TC=25unless otherwise noted)  
Parameter  
Symbol  
VDS  
Limit  
60  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current-Continuous  
V
V
±20  
VGS  
80  
56.5  
A
ID  
ID (100)  
IDM  
Drain Current-Continuous(TC=100)  
Pulsed Drain Current  
A
320  
A
Maximum Power Dissipation  
110  
W
PD  
Derating factor  
0.73  
W/℃  
mJ  
Single pulse avalanche energy (Note 5)  
Operating Junction and Storage Temperature Range  
EAS  
390  
-55 To 175  
TJ,TSTG  
Thermal Characteristic  
Thermal Resistance,Junction-to-Case(Note 2)  
RθJC  
1.36  
/W  
Wuxi NCE Power Co., Ltd  
Page1  
V3.0  

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