Datasheet > NAND04GA3C2A

NAND04GA3C2A

更新时间： 2024-11-06 04:57:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存
页数	文件大小	规格书
51页	504K
描述
4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory

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数据手册

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NAND04GA3C2A 数据手册

NAND04GA3C2A

NAND04GW3C2A

4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory

Features

■ High density multi-level Cell (MLC) NAND

Flash memories:

– Up to 128 Mbit spare area

– Cost effective solutions for mass storage

applications

■ NAND interface

TSOP48 12 x 20mm

– x8 bus width

– Multiplexed Address/ Data

■ Supply voltages

– V = 2.7 to 3.6V core supply voltage for

■ Chip Enable ‘don’t care’

Program, Erase and Read operations.

– for simple interface with microcontroller

– V

= 1.7 to 1.95 or 2.7 to 3.6V for I/O

DDQ

■ Data Protection

buffers.

– Hardware Program/Erase locked during

power transitions

■ Page size: (2048 + 64 spare) Bytes

■ Block size: (256K + 8K spare) Bytes

■ Embedded Error Correction Code (ECC)

– Internal ECC accelerator

■ Page Read/Program

– Random access: 60µs (max)

– Sequential access: 60ns(min)

– Page Program Operation time: 800µs (typ)

– Easy ECC Command Interface

■ Data integrity

– 10,000 Program/Erase cycles (with ECC)

– 10 years Data Retention

■ Cache Read mode

– Internal Cache Register to improve the

read throughput

■ ECOPACK package available

■ Development tools

■ Fast Block Erase

– Bad Blocks Management and Wear

Leveling algorithms

– Block erase time: 1.5ms (typ)

■ Status Register

– File System OS Native reference software

– Hardware simulation models

■ Electronic Signature

■ Serial Number option

Table 1.

Product List

Reference

Part Number

Density

NAND04GA3C2A

NAND04GW3C2A

NAND04Gx3C2A

4 Gbits

November 2006

Rev 2

1/51

www.st.com

12 3 4 5 6 7...51

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与NAND04GA3C2A相关器件

型号	品牌	获取价格	描述	数据表
NAND04GA3C2AN1E	STMICROELECTRONICS	获取价格	4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
NAND04GA3C2AN1F	STMICROELECTRONICS	获取价格	4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
NAND04GA3C2AN6E	STMICROELECTRONICS	获取价格	4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
NAND04GA3C2AN6F	STMICROELECTRONICS	获取价格	4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
NAND04G-B2D	NUMONYX	获取价格	4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash
NAND04GR3B2AN1F	STMICROELECTRONICS	获取价格	Flash, 512MX8, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
NAND04GR3B2AN6	STMICROELECTRONICS	获取价格	Flash, 512MX8, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
NAND04GR3B2AN6F	STMICROELECTRONICS	获取价格	512MX8 FLASH 1.8V PROM, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
NAND04GR3B2AN6T	STMICROELECTRONICS	获取价格	512MX8 FLASH 1.8V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
NAND04GR3B2BN1F	STMICROELECTRONICS	获取价格	Flash, 512MX8, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48