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NAND02GW3B2CZB6 PDF预览

NAND02GW3B2CZB6

更新时间： 2024-11-15 04:57:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
64页 633K
描述
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

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NAND02GW3B2CZB6 数据手册

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NAND01G-B  
NAND02G-B  
1 Gbit, 2 Gbit,  
2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory  
Feature summary  
●
High Density NAND Flash memories  
–
–
–
Up to 2 Gbit memory array  
Up to 64Mbit spare area  
Cost effective solutions for mass  
storage applications  
●
NAND interface  
–
–
–
x8 or x16 bus width  
TSOP48 12 x 20mm  
Multiplexed Address/ Data  
Pinout compatibility for all densities  
FBGA  
●
●
●
●
Supply voltage  
–
–
1.8V device: VDD = 1.7 to 1.95V  
3.0V device: VDD = 2.7 to 3.6V  
VFBGA63 9.5 x 12 x 1mm  
TFBGA63 9.5 x 12 x 1.2mm  
Page size  
–
–
x8 device: (2048 + 64 spare) Bytes  
x16 device: (1024 + 32 spare) Words  
●
●
Serial Number option  
Data protection  
Block size  
–
–
x8 device: (128K + 4K spare) Bytes  
x16 device: (64K + 2K spare) Words  
–
–
Hardware and Software Block Locking  
Hardware Program/Erase locked during  
Power transitions  
Page Read/Program  
–
–
–
Random access: 25µs (max)  
Sequential access: 50ns (min)  
Page program time: 300µs (typ)  
●
Data integrity  
–
–
100,000 Program/Erase cycles  
10 years Data Retention  
●
●
●
Copy Back Program mode  
● ECOPACK® packages  
–
Fast page copy without external  
buffering  
● Development tools  
–
–
–
–
Error Correction Code software and  
hardware models  
Cache Program and Cache Read modes  
–
Internal Cache Register to improve the  
program and read throughputs  
Bad Blocks Management and Wear  
Leveling algorithms  
Fast Block Erase  
File System OS Native reference  
software  
–
Block erase time: 2ms (typ)  
●
●
●
Status Register  
Electronic Signature  
Chip Enable ‘don’t care’  
Hardware simulation models  
–
for simple interface with microcontroller  
February 2006  
Rev 4.0  
1/64  
www.st.com  
2
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与NAND02GW3B2CZB6相关器件

型号 品牌 获取价格 描述 数据表
NAND02GW3B2CZB6T STMICROELECTRONICS

获取价格

 		256MX8 FLASH 3V PROM, 35ns, PBGA63, 9.50 X 12 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-63
NAND02GW3B2D NUMONYX

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 		2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memorie
NAND02GW3B2DN6E NUMONYX

获取价格

 		2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memorie
NAND02GW3B2DN6F NUMONYX

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 		2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memorie
NAND02GW3B2DZA6E NUMONYX

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 		2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memorie
NAND02GW3B2DZA6F NUMONYX

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 		2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memorie
NAND02GW3B3AN1E STMICROELECTRONICS

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 		256MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
NAND02GW3B3AN6E STMICROELECTRONICS

获取价格

 		256MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
NAND02GW3B3BZB6E STMICROELECTRONICS

获取价格

 		256MX8 FLASH 3V PROM, 35ns, PBGA63, 9.50 X 12 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMP
NAND02GW3B3CN6T STMICROELECTRONICS

获取价格

 		Flash, 256MX8, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

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