NAND02GW3B2DZA6E

更新时间： 2024-09-27 03:31:15

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存存储内存集成电路
页数	文件大小	规格书
69页	1812K
描述
2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories

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数据手册
替代型号

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NAND02GW3B2DZA6E 数据手册

NAND02G-B2D

2-Gbit, 2112-byte/1056-word page

multiplane architecture, 1.8 V or 3 V, NAND flash memories

Preliminary Data

Features

■ High density NAND flash memory

– Up to 2 Gbits of memory array

– Cost-effective solution for mass storage

applications

■ NAND interface

– x8 or x16 bus width

– Multiplexed address/data

TSOP48 12 x 20 mm (N)

■ Supply voltage: 1.8 V or 3.0 V device

FBGA

■ Page size

– x8 device: (2048 + 64 spare) bytes

– x16 device: (1024 + 32 spare) words

VFBGA63 9.5 x 12 mm (ZA)

■ Block size

■ Status register

– x8 device: (128 K + 4 K spare) bytes

– x16 device: (64 K + 2 K spare) words

■ Electronic signature

■ Chip Enable ‘don’t care’

■ Serial number option

■ Data protection:

■ Multiplane architecture

– Array split into two independent planes

– Program/erase operations can be

performed on both planes at the same time

– Hardware program/erase disabled during

power transitions

■ Page read/program

– Non-volatile protection option

– Random access: 25 µs (max)

– Sequential access: 25 ns (min)

– Page program time: 200 µs (typ)

■ ONFI 1.0 compliant command set

■ Data integrity

– Multiplane page program time (2 pages):

200 µs (typ)

– 100,000 program/erase cycles (with ECC)

– 10 years data retention

■ Copy back program with automatic EDC (error

■ ECOPACK packages

detection code)

■ Cache read mode

Table 1.

Device summary

Part number

■ Fast block erase

Reference

– Block erase time: 1.5 ms (typ)

NAND02GR3B2D

NAND02GW3B2D

NAND02GR4B2D⁽¹⁾

NAND02GW4B2D⁽¹⁾

– Multiblock erase time (2 blocks): 1.5 ms

(typ)

NAND02G-B2D

1. x 16 organization only available for MCP products.

April 2008

Rev 3

1/69

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

www.numonyx.com

12 3 4 5 6 7...69

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NAND02GW3B2DZA6E 替代型号

型号	品牌	替代类型	描述	数据表
NAND02GR3B2DZA6E	NUMONYX	功能相似	2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memorie

与NAND02GW3B2DZA6E相关器件

型号	品牌	获取价格	描述	数据表
NAND02GW3B2DZA6F	NUMONYX	获取价格	2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memorie
NAND02GW3B3AN1E	STMICROELECTRONICS	获取价格	256MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
NAND02GW3B3AN6E	STMICROELECTRONICS	获取价格	256MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
NAND02GW3B3BZB6E	STMICROELECTRONICS	获取价格	256MX8 FLASH 3V PROM, 35ns, PBGA63, 9.50 X 12 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMP
NAND02GW3B3CN6T	STMICROELECTRONICS	获取价格	Flash, 256MX8, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
NAND02GW42C	STMICROELECTRONICS	获取价格	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND02GW4B	STMICROELECTRONICS	获取价格	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND02GW4B2AN1	STMICROELECTRONICS	获取价格	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND02GW4B2AN1E	STMICROELECTRONICS	获取价格	128MX16 FLASH 3V PROM, 25000ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
NAND02GW4B2AN1F	STMICROELECTRONICS	获取价格	128MX16 FLASH 3V PROM, 25000ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48

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