5秒后页面跳转
NAND01GW4B2AN1T PDF预览

NAND01GW4B2AN1T

更新时间: 2024-11-02 09:10:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器光电二极管
页数 文件大小 规格书
57页 887K
描述
64MX16 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

NAND01GW4B2AN1T 数据手册

 浏览型号NAND01GW4B2AN1T的Datasheet PDF文件第2页浏览型号NAND01GW4B2AN1T的Datasheet PDF文件第3页浏览型号NAND01GW4B2AN1T的Datasheet PDF文件第4页浏览型号NAND01GW4B2AN1T的Datasheet PDF文件第5页浏览型号NAND01GW4B2AN1T的Datasheet PDF文件第6页浏览型号NAND01GW4B2AN1T的Datasheet PDF文件第7页 
NAND01G-B, NAND02G-B,  
NAND04G-B, NAND08G-B  
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit  
2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory  
PRELIMINARY DATA  
FEATURES SUMMARY  
HIGH DENSITY NAND FLASH MEMORIES  
Figure 1. Packages  
Up to 8 Gbit memory array  
Up to 64Mbit spare area  
Cost effective solutions for mass storage  
applications  
NAND INTERFACE  
TSOP48 12 x 20mm  
x8 or x16 bus width  
Multiplexed Address/ Data  
Pinout compatibility for all densities  
FBGA  
SUPPLY VOLTAGE  
1.8V device: V = 1.7 to 1.95V  
DD  
VFBGA63 9.5 x 12 x 1mm  
TFBGA63 9.5 x 12 x 1.2mm  
3.0V device: V = 2.7 to 3.6V  
DD  
PAGE SIZE  
x8 device: (2048 + 64 spare) Bytes  
x16 device: (1024 + 32 spare) Words  
DATA PROTECTION  
Hardware and Software Block Locking  
Hardware Program/Erase locked during  
Power transitions  
BLOCK SIZE  
x8 device: (128K + 4K spare) Bytes  
x16 device: (64K + 2K spare) Words  
DATA INTEGRITY  
PAGE READ / PROGRAM  
100,000 Program/Erase cycles  
10 years Data Retention  
RoHS COMPLIANCE  
Lead-Free Components are Compliant  
with the RoHS Directive  
DEVELOPMENT TOOLS  
Random access: 25µs (max)  
Sequential access: 50ns (min)  
Page program time: 300µs (typ)  
COPY BACK PROGRAM MODE  
Fast page copy without external buffering  
CACHE PROGRAM AND CACHE READ  
MODES  
Error Correction Code software and  
hardware models  
Bad Blocks Management and Wear  
Leveling algorithms  
PC Demo board with simulation software  
File System OS Native reference software  
Hardware simulation models  
Internal Cache Register to improve the  
program and read throughputs  
FAST BLOCK ERASE  
Block erase time: 2ms (typ)  
STATUS REGISTER  
ELECTRONIC SIGNATURE  
CHIP ENABLE ‘DON’T CARE’  
for simple interface with microcontroller  
SERIAL NUMBER OPTION  
October 2005  
1/57  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

与NAND01GW4B2AN1T相关器件

型号 品牌 获取价格 描述 数据表
NAND01GW4B2AN6 STMICROELECTRONICS

获取价格

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GW4B2AN6E STMICROELECTRONICS

获取价格

64MX16 FLASH 3V PROM, 25000ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
NAND01GW4B2AN6E NUMONYX

获取价格

Flash, 64MX16, 25000ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
NAND01GW4B2AN6F NUMONYX

获取价格

Flash, 64MX16, 25000ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
NAND01GW4B2AN6T STMICROELECTRONICS

获取价格

Flash, 64MX16, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
NAND01GW4B2AV1 NUMONYX

获取价格

Flash, 64MX16, 25000ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, PLASTIC, USOP-48
NAND01GW4B2AV1E NUMONYX

获取价格

Flash, 64MX16, 25000ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, ROHS COMPLIANT, PLASTIC, USOP-
NAND01GW4B2AV1F NUMONYX

获取价格

Flash, 64MX16, 25000ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, ROHS COMPLIANT, PLASTIC, USOP-
NAND01GW4B2AV6 NUMONYX

获取价格

64MX16 FLASH 3V PROM, 25000ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, PLASTIC, USOP-48
NAND01GW4B2AV6E NUMONYX

获取价格

Flash, 64MX16, 25000ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, ROHS COMPLIANT, PLASTIC, USOP-