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NAND01GW4B2BN1F PDF预览

NAND01GW4B2BN1F

更新时间: 2024-11-06 05:26:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
62页 713K
描述
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

NAND01GW4B2BN1F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TSOP
包装说明:12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.25
Is Samacsys:N最长访问时间:25000 ns
JESD-30 代码:R-PDSO-G48JESD-609代码:e3/e6
长度:18.4 mm内存密度:1073741824 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1端子数量:48
字数:67108864 words字数代码:64000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:64MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
编程电压:3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:TIN/TIN BISMUTH
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
类型:NAND TYPE宽度:12 mm
Base Number Matches:1

NAND01GW4B2BN1F 数据手册

 浏览型号NAND01GW4B2BN1F的Datasheet PDF文件第2页浏览型号NAND01GW4B2BN1F的Datasheet PDF文件第3页浏览型号NAND01GW4B2BN1F的Datasheet PDF文件第4页浏览型号NAND01GW4B2BN1F的Datasheet PDF文件第5页浏览型号NAND01GW4B2BN1F的Datasheet PDF文件第6页浏览型号NAND01GW4B2BN1F的Datasheet PDF文件第7页 
NAND01G-B2B  
NAND02G-B2C  
1 Gbit, 2 Gbit,  
2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory  
Features  
High Density NAND Flash memories  
Up to 2 Gbit memory array  
Cost effective solutions for mass  
storage applications  
NAND interface  
TSOP48 12 x 20mm  
x8 or x16 bus width  
Multiplexed Address/ Data  
Pinout compatibility for all densities  
FBGA  
Supply voltage: 1.8V/3.0V  
Page size  
VFBGA63 9.5 x 12 x 1mm  
VFBGA63 9 x 11 x 1mm  
x8 device: (2048 + 64 spare) Bytes  
x16 device: (1024 + 32 spare) Words  
Serial Number option  
Data protection  
Block size  
x8 device: (128K + 4K spare) Bytes  
x16 device: (64K + 2K spare) Words  
Hardware Block Locking  
Hardware Program/Erase locked during  
Power transitions  
Page Read/Program  
Random access: 25µs (max)  
Data integrity  
Sequential access: 30ns (min)  
Page program time: 200µs (typ)  
100,000 Program/Erase cycles  
10 years Data Retention  
Copy Back Program mode  
Cache Program and Cache Read modes  
Fast Block Erase: 2ms (typ)  
Status Register  
®
ECOPACK packages  
Development tools  
Error Correction Code models  
Bad Blocks Management and Wear  
Leveling algorithms  
Electronic Signature  
Chip Enable ‘don’t care’  
Hardware simulation models  
Table 1.  
Product List  
Reference  
Part Number  
NAND01GR3B2B, NAND01GW3B2B  
NAND01G-B2B  
NAND02G-B2C  
NAND01GR4B2B, NAND01GW4B2B(1)  
NAND02GR3B2C, NAND02GW3B2C  
NAND02GR4B2C, NAND02GW4B2C(1)  
1. x16 organization only available for MCP Products.  
November 2006  
Rev 3  
1/62  
www.st.com  
1

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NAND01GW4B2BN1T NUMONYX

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Flash, 64MX16, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
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NAND01GW4B2BN6E NUMONYX

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1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GW4B2BN6F STMICROELECTRONICS

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1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GW4B2BN6F NUMONYX

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1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GW4B2BN6T NUMONYX

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暂无描述
NAND01GW4B2BN6T STMICROELECTRONICS

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64MX16 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
NAND01GW4B2BV1 NUMONYX

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64MX16 FLASH 3V PROM, 25000ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, PLASTIC, USOP-48