Datasheet > NAND01GW3B2BN1T

NAND01GW3B2BN1T

更新时间： 2024-02-22 11:28:09

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		光电二极管
页数	文件大小	规格书
57页	887K
描述
Flash, 128MX8, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

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技术参数
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NAND01GW3B2BN1T 技术参数

生命周期：	Transferred	零件包装代码：	TSOP
包装说明：	12 X 20 MM, PLASTIC, TSOP-48	针数：	48
Reach Compliance Code：	unknown	ECCN代码：	3A991.B.1.A
HTS代码：	8542.32.00.51	风险等级：	5.09
最长访问时间：	35 ns	JESD-30 代码：	R-PDSO-G48
JESD-609代码：	e0	长度：	18.4 mm
内存密度：	1073741824 bit	内存集成电路类型：	FLASH
内存宽度：	8	功能数量：	1
端子数量：	48	字数：	134217728 words
字数代码：	128000000	工作模式：	ASYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	128MX8	封装主体材料：	PLASTIC/EPOXY
封装代码：	TSOP1	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	NOT SPECIFIED	编程电压：	3 V
认证状态：	Not Qualified	座面最大高度：	1.2 mm
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	2.7 V
标称供电电压 (Vsup)：	3 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子面层：	TIN LEAD	端子形式：	GULL WING
端子节距：	0.5 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	类型：	NAND TYPE
宽度：	12 mm	Base Number Matches：	1

NAND01GW3B2BN1T 数据手册

NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B

SUMMARY DESCRIPTION

The NAND Flash 2112 Byte/ 1056 Word Page is a

family of non-volatile Flash memories that uses

NAND cell technology. The devices range from 1

Gbit to 8 Gbits and operate with either a 1.8V or 3V

voltage supply. The size of a Page is either 2112

Bytes (2048 + 64 spare) or 1056 Words (1024 + 32

spare) depending on whether the device has a x8

or x16 bus width.

The address lines are multiplexed with the Data In-

put/Output signals on a multiplexed x8 or x16 In-

put/Output bus. This interface reduces the pin

count and makes it possible to migrate to other

densities without changing the footprint.

Each device has Cache Program and Cache Read

features which improve the program and read

throughputs for large files. During Cache Program-

ming, the device loads the data in a Cache Regis-

ter while the previous data is transferred to the

Page Buffer and programmed into the memory ar-

ray. During Cache Reading, the device loads the

data in a Cache Register while the previous data

is transferred to the I/O Buffers to be read.

All devices have the Chip Enable Don’t Care fea-

ture, which allows code to be directly downloaded

by a microcontroller, as Chip Enable transitions

during the latency time do not stop the read oper-

ation.

Each block can be programmed and erased over

100,000 cycles. To extend the lifetime of NAND

Flash devices it is strongly recommended to imple-

ment an Error Correction Code (ECC).

All devices have the option of a Unique Identifier

(serial number), which allows each device to be

uniquely identified.

The devices have hardware and software security

features:

The Unique Identifier options is subject to an NDA

(Non Disclosure Agreement) and so not described

in the datasheet. For more details of this option

contact your nearest ST Sales office.

The devices are available in the following packag-

es:

■

A Write Protect pin is available to give a

hardware protection against program and

erase operations.

■

A Block Locking scheme is available to

provide user code and/or data protection.

■

TSOP48 (12 x 20mm) for all products

The devices feature an open-drain Ready/Busy

output that can be used to identify if the Program/

Erase/Read (P/E/R) Controller is currently active.

The use of an open-drain output allows the Ready/

Busy pins from several memories to be connected

to a single pull-up resistor.

A Copy Back Program command is available to

optimize the management of defective blocks.

When a Page Program operation fails, the data

can be programmed in another page without hav-

ing to resend the data to be programmed.

■

VFBGA63 (9.5 x 12 x 1mm, 0.8mm pitch) for

1Gb products

TFBGA63 (9.5 x 12 x 1.2mm, 0.8mm pitch) for

2Gb Dual Die products

■

For information on how to order these options refer

to Table 29., Ordering Information Scheme. De-

vices are shipped from the factory with Block 0 al-

ways valid and the memory content bits, in valid

blocks, erased to ’1’.

See Table 2., Product Description, for all the de-

vices available in the family.

7/57

1...4 5 678 9 10...57

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与NAND01GW3B2BN1T相关器件

型号	品牌	描述	获取价格	数据表
NAND01GW3B2BN6	STMICROELECTRONICS	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory	获取价格
NAND01GW3B2BN6E	STMICROELECTRONICS	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory	获取价格
NAND01GW3B2BN6E	NUMONYX	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory	获取价格
NAND01GW3B2BN6F	NUMONYX	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory	获取价格
NAND01GW3B2BN6F	STMICROELECTRONICS	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory	获取价格
NAND01GW3B2BN6T	STMICROELECTRONICS	暂无描述	获取价格

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