NAND01G-B
NAND02G-B
1 Gbit, 2 Gbit,
2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
Feature summary
●
High Density NAND Flash memories
–
–
–
Up to 2 Gbit memory array
Up to 64Mbit spare area
Cost effective solutions for mass
storage applications
●
NAND interface
–
–
–
x8 or x16 bus width
TSOP48 12 x 20mm
Multiplexed Address/ Data
Pinout compatibility for all densities
FBGA
●
●
●
●
Supply voltage
–
–
1.8V device: VDD = 1.7 to 1.95V
3.0V device: VDD = 2.7 to 3.6V
VFBGA63 9.5 x 12 x 1mm
TFBGA63 9.5 x 12 x 1.2mm
Page size
–
–
x8 device: (2048 + 64 spare) Bytes
x16 device: (1024 + 32 spare) Words
●
●
Serial Number option
Data protection
Block size
–
–
x8 device: (128K + 4K spare) Bytes
x16 device: (64K + 2K spare) Words
–
–
Hardware and Software Block Locking
Hardware Program/Erase locked during
Power transitions
Page Read/Program
–
–
–
Random access: 25µs (max)
Sequential access: 50ns (min)
Page program time: 300µs (typ)
●
Data integrity
–
–
100,000 Program/Erase cycles
10 years Data Retention
●
●
●
Copy Back Program mode
● ECOPACK® packages
–
Fast page copy without external
buffering
● Development tools
–
–
–
–
Error Correction Code software and
hardware models
Cache Program and Cache Read modes
–
Internal Cache Register to improve the
program and read throughputs
Bad Blocks Management and Wear
Leveling algorithms
Fast Block Erase
File System OS Native reference
software
–
Block erase time: 2ms (typ)
●
●
●
Status Register
Electronic Signature
Chip Enable ‘don’t care’
Hardware simulation models
–
for simple interface with microcontroller
February 2006
Rev 4.0
1/64
www.st.com
2