Datasheet > N25S830HA

N25S830HA

更新时间： 2024-11-02 05:51:51

品牌	Logo	应用领域
安森美 - ONSEMI		静态存储器
页数	文件大小	规格书
15页	231K
描述
256Kb Low Power Serial SRAMs 32K × 8 bit Organization

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N25S830HA 数据手册

N25S830HA

256Kb Low Power Serial SRAMs

32K × 8 bit Organization

Overview

Features

The ON Semiconductor serial SRAM family

includes several integrated memory devices

including this 256Kb serially accessed Static

Random Access Memory, internally organized as

32K words by 8 bits. The devices are designed and

fabricated using ON Semiconductor’s advanced

CMOS technology to provide both high-speed

performance and low power. The devices operate

with a single chip select (CS) input and use a

simple Serial Peripheral Interface (SPI) serial bus.

A single data in and data out line is used along with

a clock to access data within the devices. The

N25S830HA devices include a HOLD pin that

allows communication to the device to be paused.

While paused, input transitions will be ignored.

The devices can operate over a wide temperature

• Power Supply Range

2.7 to 3.6V

• Very low standby current

Typical Isb as low as 1uA

• Very low operating current

As low as 3mA

• Simple memory control

Single chip select (CS)

Serial input (SI) and serial output (SO)

• Flexible operating modes

Word read and write

Page mode (32 word page)

Burst mode (full array)

• Organization

32K x 8 bit

range of -40 C to +85 C and can be available in

• Self timed write cycles

several standard package offerings.

• Built-in write protection (CS high)

• HOLD pin for pausing communication

• High reliability

Unlimited write cycles

• RoHS Compliant Packages

Green SOIC and TSSOP

Device Options

Typical

Power

Speed

Read/Write

Part Number

Density

Package

Standby

Current

Supply (V)

(MHz)

Operating Current

N25S830HAS2

N25S830HAT2

SOIC

TSSOP

256Kb

3.0

1uA

3 mA @ 1Mhz

July 2008 - Rev. 9

Publication Order Number:

N25S830HA/D

12 3 4 5 6 7...15

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