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N25S830HAT22I PDF预览

N25S830HAT22I

更新时间: 2024-11-02 05:51:51
品牌 Logo 应用领域
安森美 - ONSEMI 存储内存集成电路静态存储器光电二极管PC时钟
页数 文件大小 规格书
15页 231K
描述
256Kb Low Power Serial SRAMs 32K × 8 bit Organization

N25S830HAT22I 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SOIC包装说明:TSSOP, TSSOP8,.25
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.41
Factory Lead Time:1 week风险等级:1.77
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:225912Samacsys Pin Count:8
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Small Outline Packages
Samacsys Footprint Name:TSSOP8Samacsys Released Date:2015-08-14 08:50:14
Is Samacsys:N最大时钟频率 (fCLK):20 MHz
I/O 类型:SEPARATEJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.4 mm
内存密度:262144 bit内存集成电路类型:STANDARD SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端口数量:1, (3 LINE)
端子数量:8字数:32768 words
字数代码:32000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:32KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3 V
认证状态:Not Qualified座面最大高度:1.1 mm
最大待机电流:0.000004 A最小待机电流:2.7 V
子类别:SRAMs最大压摆率:0.01 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin (Sn)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3 mm
Base Number Matches:1

N25S830HAT22I 数据手册

 浏览型号N25S830HAT22I的Datasheet PDF文件第2页浏览型号N25S830HAT22I的Datasheet PDF文件第3页浏览型号N25S830HAT22I的Datasheet PDF文件第4页浏览型号N25S830HAT22I的Datasheet PDF文件第5页浏览型号N25S830HAT22I的Datasheet PDF文件第6页浏览型号N25S830HAT22I的Datasheet PDF文件第7页 
N25S830HA  
256Kb Low Power Serial SRAMs  
32K × 8 bit Organization  
Overview  
Features  
The ON Semiconductor serial SRAM family  
includes several integrated memory devices  
including this 256Kb serially accessed Static  
Random Access Memory, internally organized as  
32K words by 8 bits. The devices are designed and  
fabricated using ON Semiconductor’s advanced  
CMOS technology to provide both high-speed  
performance and low power. The devices operate  
with a single chip select (CS) input and use a  
simple Serial Peripheral Interface (SPI) serial bus.  
A single data in and data out line is used along with  
a clock to access data within the devices. The  
N25S830HA devices include a HOLD pin that  
allows communication to the device to be paused.  
While paused, input transitions will be ignored.  
The devices can operate over a wide temperature  
• Power Supply Range  
2.7 to 3.6V  
• Very low standby current  
Typical Isb as low as 1uA  
• Very low operating current  
As low as 3mA  
• Simple memory control  
Single chip select (CS)  
Serial input (SI) and serial output (SO)  
• Flexible operating modes  
Word read and write  
Page mode (32 word page)  
Burst mode (full array)  
• Organization  
32K x 8 bit  
o
o
range of -40 C to +85 C and can be available in  
• Self timed write cycles  
several standard package offerings.  
• Built-in write protection (CS high)  
• HOLD pin for pausing communication  
• High reliability  
Unlimited write cycles  
• RoHS Compliant Packages  
Green SOIC and TSSOP  
Device Options  
Typical  
Power  
Speed  
Read/Write  
Part Number  
Density  
Package  
Standby  
Current  
Supply (V)  
(MHz)  
Operating Current  
N25S830HAS2  
N25S830HAT2  
SOIC  
TSSOP  
256Kb  
3.0  
20  
1uA  
3 mA @ 1Mhz  
©2008 SCILLC. All rights reserved.  
July 2008 - Rev. 9  
Publication Order Number:  
N25S830HA/D  

N25S830HAT22I 替代型号

型号 品牌 替代类型 描述 数据表
N25S830HAT22IT ONSEMI

完全替代

256Kb Low Power Serial SRAMs 32K × 8 bit Orga
N25S830HAS22IT ONSEMI

完全替代

256Kb Low Power Serial SRAMs 32K × 8 bit Orga
N25S830HAS22I ONSEMI

类似代替

256Kb Low Power Serial SRAMs 32K × 8 bit Orga

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